Datasheet > M28W320ECT70N1F

M28W320ECT70N1F

更新时间： 2024-11-06 23:05:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
53页	780K
描述
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

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M28W320ECT70N1F 数据手册

M28W320ECT

M28W320ECB

32 Mbit (2Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 2.7V to 3.6V Core Power Supply

– V

= 1.65V to 3.6V for Input/Output

DDQ

– V = 12V for fast Program (optional)

FBGA

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME:

– 10µs typical

TFBGA47 (ZB)

6.39 x 6.37mm

– Double Word Programming Option

– Quadruple Word Programming Option

■ COMMON FLASH INTERFACE

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK LOCKING

– All blocks locked at Power Up

– Any combination of blocks can be locked

– WP for Block Lock-Down

TSOP48 (N)

12 x 20mm

■ SECURITY

– 128 bit user Programmable OTP cells

– 64 bit unique device identifier

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W320ECT: 88BAh

– Bottom Device Code, M28W320ECB: 88BBh

April 2003

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