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M28W320CB70GB6T PDF预览

M28W320CB70GB6T

更新时间: 2024-11-21 03:24:47
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
42页 276K
描述
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

M28W320CB70GB6T 数据手册

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M28W320CT  
M28W320CB  
32 Mbit (2Mb x16, Boot Block) Low Voltage Flash Memory  
PRELIMINARY DATA  
SUPPLY VOLTAGE  
– V = 2.7V to 3.6V: for Program, Erase and  
DD  
Read  
– V  
= 1.65V or 2.7V: Input/Output option  
DDQ  
– V = 12V: optional Supply Voltage for fast  
PP  
µBGA  
Program  
ACCESS TIME  
– 2.7V to 3.6V: 90ns  
– 2.7V to 3.6V: 100ns  
TSOP48 (N)  
12 x 20mm  
µBGA47 (GB)  
8 x 6 solder balls  
PROGRAMMING TIME:  
– 10µs typical  
– Double Word Programming Option  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
COMMON FLASH INTERFACE  
MEMORY BLOCKS  
Figure 1. Logic Diagram  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
BLOCK PROTECTION UNPROTECTION  
– All Blocks protected at Power Up  
– Any combination of blocks can be protected  
– WP for block locking  
V
V
V
DD DDQ PP  
21  
16  
A0-A20  
DQ0-DQ15  
SECURITY  
W
E
– 64-bit user Programmable OTP cells  
– 64-bit unique device identifier  
– One Parameter Block Permanently Lockable  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
M28W320CT  
M28W320CB  
G
RP  
WP  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS of DATA RETENTION  
– Defectivity below 1ppm/year  
V
SS  
ELECTRONIC SIGNATURE  
AI03521  
– Manufacturer Code: 20h  
– Top Device Code, M28W320CT: 88BAh  
– Bottom Device Code, M28W320CB: 88BBh  
May 2000  
1/42  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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