M28W160BTB90GB1T

更新时间： 2024-11-08 22:39:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
39页	279K
描述
16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory

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数据手册

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M28W160BTB90GB1T 数据手册

M28W160BT

M28W160BB

16 Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory

■ SUPPLY VOLTAGE

– V = 2.7V to 3.6V: for Program, Erase and

Read

– V

= 1.65V or 2.7V: Input/Output option

DDQ

– V

= 12V: optional Supply Voltage for fast

µBGA

Program

■ ACCESS TIME

– 2.7V to 3.6V: 90ns

– 2.7V to 3.6V: 100ns

TSOP48 (N)

12 x 20mm

µBGA46 (GB)

8 x 6 solder balls

■ PROGRAMMING TIME:

– 10µs typical

– Double Word Programming Option

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

■ COMMON FLASH INTERFACE

– 64 bit Security Code

Figure 1. Logic Diagram

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

DD DDQ PP

■ BLOCK PROTECTION on TWO PARAMETER

BLOCKS

– WP for Block Protection

A0-A19

DQ0-DQ15

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per

M28W160BT

M28W160BB

BLOCK

■ 20 YEARS of DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W160BT: 90h

– Bottom Device Code, M28W160BB: 91h

AI02628

May 2000

1/39

12 3 4 5 6 7...39

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