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M28V430-180N3TR PDF预览

M28V430-180N3TR

更新时间: 2024-11-11 19:09:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
27页 868K
描述
512KX8 FLASH 12V PROM, 180ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M28V430-180N3TR 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:12 X 20 MM, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
最长访问时间:180 ns其他特性:10000 PROGRAM/ERASE CYCLES; BLOCK ERASE; USER CONFIGURABLE AS 256K X 16
启动块:TOPJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:12 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M28V430-180N3TR 数据手册

 浏览型号M28V430-180N3TR的Datasheet PDF文件第2页浏览型号M28V430-180N3TR的Datasheet PDF文件第3页浏览型号M28V430-180N3TR的Datasheet PDF文件第4页浏览型号M28V430-180N3TR的Datasheet PDF文件第5页浏览型号M28V430-180N3TR的Datasheet PDF文件第6页浏览型号M28V430-180N3TR的Datasheet PDF文件第7页 

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