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M28F220-100XN3TR PDF预览

M28F220-100XN3TR

更新时间: 2024-11-09 19:43:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
42页 300K
描述
256KX8 FLASH 12V PROM, 100ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M28F220-100XN3TR 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:12 X 20 MM, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
最长访问时间:100 ns其他特性:100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK
启动块:BOTTOMJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:12 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M28F220-100XN3TR 数据手册

 浏览型号M28F220-100XN3TR的Datasheet PDF文件第2页浏览型号M28F220-100XN3TR的Datasheet PDF文件第3页浏览型号M28F220-100XN3TR的Datasheet PDF文件第4页浏览型号M28F220-100XN3TR的Datasheet PDF文件第5页浏览型号M28F220-100XN3TR的Datasheet PDF文件第6页浏览型号M28F220-100XN3TR的Datasheet PDF文件第7页 
M28F210  
M28F220  
2 Megabit (x8 or x16, Block Erase) FLASH MEMORY  
PRELIMINARY DATA  
DUAL x8 and x16 ORGANIZATION  
SMALL SIZE PLASTIC PACKAGESTSOP48  
and SO44  
MEMORY ERASE in BLOCKS  
44  
– One 16K Byte or 8K Word Boot Block (top or  
bottom location) with hardware write and  
erase protection  
1
– Two 8K Byte or 4K Word Key Parameter  
Blocks  
– One 96K Byte or 48K Word Main Block  
– One 128K Byte or 64K Word Main Blocks  
5V ± 10% SUPPLYVOLTAGE  
SO44 (M)  
TSOP48 (N)  
12 x 20mm  
12V ± 5% or ± 10% PROGRAMMING  
VOLTAGE  
100,000 PROGRAM/ERASE CYCLES  
PROGRAM/ERASE CONTROLLER  
AUTOMATIC STATIC MODE  
Figure 1. Logic Diagram  
LOW POWER CONSUMPTION  
– 60µA Typical in Standby  
– 0.2µA Typical in Deep Power Down  
– 15/20mATypical Operating Consumption  
(Byte/Word)  
V
CC  
V
PP  
HIGH SPEED ACCESS TIME: 70ns  
EXTENDED TEMPERATURE RANGES  
17  
DQ15A-1  
A0-A16  
Table 1. Signal Names  
15  
RP  
W
E
DQ0-DQ14  
BYTE  
A0-A16  
DQ0-DQ7  
DQ8-DQ14  
DQ15A-1  
E
Address Inputs  
M28F210  
M28F220  
Data Input / Outputs  
Data Input / Outputs  
Data Input/Output or Address Input  
Chip Enable  
G
G
Output Enable  
W
Write Enable  
BYTE  
Byte/Word Organization  
V
SS  
AI01297  
Reset/Power Down/Boot Block  
Unlock  
RP  
VPP  
VCC  
VSS  
Program & Erase Supply Voltage  
Supply Voltage  
Ground  
February 1996  
1/42  
This is preliminary informationon a new product now in developmentor undergoingevaluation. Detailsare subject to change without notice.  

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