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M27W201-150N6TR PDF预览

M27W201-150N6TR

更新时间: 2024-10-28 22:55:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
16页 173K
描述
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM

M27W201-150N6TR 数据手册

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M27W201  
2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM  
2.7V to 3.6V LOW VOLTAGE in READ  
OPERATION  
ACCESS TIME:  
32  
32  
– 70ns at V = 3.0V to 3.6V  
CC  
– 80ns at V = 2.7V to 3.6V  
CC  
1
1
PIN COMPATIBLE with M27C2001  
LOW POWER CONSUMPTION:  
– 15µA max Standby Current  
FDIP32W (F)  
PDIP32 (B)  
– 15mA max Active Current at 5MHz  
PROGRAMMING TIME 100µs/byte  
HIGH RELIABILITY CMOS TECHNOLOGY  
– 2,000V ESD Protection  
PLCC32 (K)  
TSOP32 (N)  
8 x 20 mm  
– 200mA Latchup Protection Immunity  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: 61h  
DESCRIPTION  
TSOP32 (NZ)  
8 x 14 mm  
The M27W201 is a low voltage 2 Mbit EPROM of-  
fered in the two range UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage and is organised as 262,144 by 8  
bits.  
The M27W201 operates in the read mode with a  
supply voltage as low as 2.7V at –40 to 85°C tem-  
perature range. The decrease in operating power  
allows either a reduction of the size of the battery  
or an increase in the time between battery re-  
charges.  
Figure 1. Logic Diagram  
V
V
PP  
CC  
18  
8
A0-A17  
Q0-Q7  
The FDIP32W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
P
E
M27W201  
G
For application where the content is programmed  
only one time and erasure is not required, the  
M27W201 is offered in PDIP32, PLCC32 and  
TSOP32 (8 x 20mm and 8 x 14mm) packages.  
V
SS  
AI01359  
October 2001  
1/16  

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