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M27V402120N4 PDF预览

M27V402120N4

更新时间: 2024-10-29 08:13:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管
页数 文件大小 规格书
15页 101K
描述
256KX16 OTPROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

M27V402120N4 数据手册

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M27V402  
4 Mbit (256Kb x16) Low Voltage UV EPROM and OTP EPROM  
NOT FOR NEW DESIGN  
M27V402 is replaced by the M27W402  
LOW VOLTAGE READ OPERATION:  
3V to 3.6V  
ACCESS TIME: 120ns  
LOW POWER CONSUMPTION:  
40  
40  
– Active Current 15mA at 5MHz  
1
1
– Standby Current 20µA  
FDIP40W (F)  
PDIP40 (B)  
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIME: 100µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: 8Dh  
DESCRIPTION  
PLCC44 (K)  
TSOP40 (N)  
10 x 20 mm  
The M27V402 is a low voltage, low power 4 Mbit  
UV erasable and electrically programmable  
EPROM, ideally suited for handheld and portable  
microprocessor systems requiring large programs.  
It is organized as 262,144 by 16 bits.  
Figure 1. Logic Diagram  
The M27V402 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
V
V
PP  
CC  
The FDIP40W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
18  
16  
A0-A17  
Q0-Q15  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27V256 is offered in PDIP40, PLCC44 and  
TSOP40 (10 x 20 mm) packages.  
E
M27V402  
G
V
SS  
AI01819  
July 2000  
1/15  
This is information on a product still in production but not recommended for new designs.  

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