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M27V160-150K1TR PDF预览

M27V160-150K1TR

更新时间: 2024-10-27 19:55:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器OTP只读存储器内存集成电路
页数 文件大小 规格书
17页 181K
描述
1MX16 OTPROM, 150ns, PQCC44, ROHS COMPLIANT, PLASTIC, LCC-44

M27V160-150K1TR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:LCC包装说明:QCCJ, LDCC44,.7SQ
针数:44Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.83最长访问时间:150 ns
备用内存宽度:8I/O 类型:COMMON
JESD-30 代码:S-PQCC-J44JESD-609代码:e3
长度:16.586 mm内存密度:16777216 bit
内存集成电路类型:OTP ROM内存宽度:16
功能数量:1端子数量:44
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC44,.7SQ
封装形状:SQUARE封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
座面最大高度:4.57 mm最大待机电流:0.00006 A
子类别:OTP ROMs最大压摆率:0.03 mA
最大供电电压 (Vsup):3.63 V最小供电电压 (Vsup):2.97 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:16.586 mm
Base Number Matches:1

M27V160-150K1TR 数据手册

 浏览型号M27V160-150K1TR的Datasheet PDF文件第2页浏览型号M27V160-150K1TR的Datasheet PDF文件第3页浏览型号M27V160-150K1TR的Datasheet PDF文件第4页浏览型号M27V160-150K1TR的Datasheet PDF文件第5页浏览型号M27V160-150K1TR的Datasheet PDF文件第6页浏览型号M27V160-150K1TR的Datasheet PDF文件第7页 
M27V160  
16 Mbit (2Mb x8 or 1Mb x16)  
Low Voltage UV EPROM and OTP EPROM  
3V to 3.6V LOW VOLTAGE in READ  
OPERATION  
ACCESS TIME: 100ns  
BYTE-WIDE or WORD-WIDE  
42  
42  
CONFIGURABLE  
1
1
16 Mbit MASK ROM REPLACEMENT  
LOW POWER CONSUMPTION  
– Active Current 30mA at 8MHz  
– Standby Current 60µA  
PDIP42 (B)  
FDIP42W (F)  
PROGRAMMING VOLTAGE: 12.5V ± 0.25V  
PROGRAMMING TIME: 50µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
42  
1
SDIP42 (S)  
– Device Code: B1h  
DESCRIPTION  
The M27V160 is a low voltage 16 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage. It is organised as either 2 Mbit  
words of 8 bit or 1 Mbit words of 16 bit. The pin-out  
is compatible with a 16 Mbit Mask ROM.  
SO44 (M)  
PLCC44 (K)  
Figure 1. Logic Diagram  
The M27V160 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
The FDIP42W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written rapidly to  
the device by following the programming proce-  
dure.  
V
CC  
20  
Q15A–1  
A0-A19  
15  
Q0-Q14  
E
M27V160  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27V160 is offered in PDIP42, SDIP42, PLCC44  
and SO44 packages.  
G
BYTEV  
PP  
V
SS  
AI01898  
March 2002  
1/17  

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