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M27C256B-90F7X PDF预览

M27C256B-90F7X

更新时间: 2024-11-15 23:10:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
16页 149K
描述
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM

M27C256B-90F7X 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:WDIP,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.61风险等级:5.48
Is Samacsys:N最长访问时间:90 ns
JESD-30 代码:R-GDIP-T28内存密度:262144 bit
内存集成电路类型:UVPROM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:105 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:CERAMIC, GLASS-SEALED封装代码:WDIP
封装形状:RECTANGULAR封装形式:IN-LINE, WINDOW
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:5.71 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:15.24 mmBase Number Matches:1

M27C256B-90F7X 数据手册

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M27C256B  
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM  
5V ± 10% SUPPLY VOLTAGE in READ  
OPERATION  
ACCESS TIME: 45ns  
LOW POWER CONSUMPTION:  
– Active Current 30mA at 5MHz  
– Standby Current 100µA  
28  
28  
1
1
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIME: 100µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
FDIP28W (F)  
PDIP28 (B)  
– Device Code: 8Dh  
DESCRIPTION  
The M27C256B is a 256 Kbit EPROM offered in  
the two ranges UV (ultra violet erase) and OTP  
(one time programmable). It is ideally suited for mi-  
croprocessor systems and is organized as 32,768  
by 8 bits.  
PLCC32 (C)  
TSOP28 (N)  
8 x 13.4 mm  
Figure 1. Logic Diagram  
The FDIP28W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27C256B is offered in PDIP28, PLCC32 and  
TSOP28 (8 x 13.4 mm) packages.  
V
V
PP  
CC  
15  
8
A0-A14  
Q0-Q7  
E
M27C256B  
G
V
SS  
AI00755B  
August 2002  
1/16  

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