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M27C160-70XF1TR PDF预览

M27C160-70XF1TR

更新时间: 2024-10-26 22:37:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
16页 112K
描述
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM

M27C160-70XF1TR 数据手册

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M27C160  
16 Mbit (2Mb x8 or 1Mb x16) UV EPROM and OTP EPROM  
5V ± 10% SUPPLY VOLTAGE in READ  
OPERATION  
FAST ACCESS TIME: 70ns  
BYTE-WIDE or WORD-WIDE  
42  
42  
CONFIGURABLE  
16 Mbit MASK ROM REPLACEMENT  
LOW POWER CONSUMPTION  
– Active Current 70mA at 8MHz  
– Standby Current 100µA  
1
1
FDIP42W (F)  
PDIP42 (B)  
PROGRAMMING VOLTAGE: 12.5V ± 0.25V  
PROGRAMMING TIME: 100µs/byte (typical)  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
44  
1
– Device Code: 00B1h  
PLCC44 (K)  
SO44 (M)  
DESCRIPTION  
The M27C160 is a 16 Mbit EPROM offered in the  
two ranges UV (ultra violet erase) and OTP (one  
time programmable). It is ideally suited for micro-  
processor systems requiring large data or program  
storage and is organised as either 2 Mbit words of  
8 bit or 1 Mbit words of 16 bit. The pin-out is com-  
patible with a 16 Mbit Mask ROM.  
The FDIP42W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern.  
Figure 1. Logic Diagram  
V
CC  
20  
Q15A–1  
A0-A19  
15  
Table 1. Signal Names  
Q0-Q14  
E
M27C160  
A0-A19  
Q0-Q7  
Q8-Q14  
Q15A–1  
E
Address Inputs  
Data Outputs  
G
Data Outputs  
BYTEV  
PP  
Data Output / Address Input  
Chip Enable  
G
Output Enable  
V
SS  
AI00739B  
BYTEV  
Byte Mode / Program Supply  
Supply Voltage  
Ground  
PP  
V
V
CC  
SS  
February 1999  
1/16  

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