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M25PX64STVME6E PDF预览

M25PX64STVME6E

更新时间: 2024-01-27 01:20:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
66页 541K
描述
IC,SERIAL EEPROM,NOR FLASH,8MX8,CMOS,LLCC,8PIN,PLASTIC

M25PX64STVME6E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SON, SOLCC8,.3Reach Compliance Code:compliant
风险等级:5.52最大时钟频率 (fCLK):75 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-N8内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:8
端子数量:8字数:8388608 words
字数代码:8000000最高工作温度:85 °C
最低工作温度:-40 °C组织:8MX8
封装主体材料:PLASTIC/EPOXY封装代码:SON
封装等效代码:SOLCC8,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
电源:3/3.3 V认证状态:Not Qualified
串行总线类型:SPI最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.015 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
类型:NOR TYPE写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25PX64STVME6E 数据手册

 浏览型号M25PX64STVME6E的Datasheet PDF文件第2页浏览型号M25PX64STVME6E的Datasheet PDF文件第3页浏览型号M25PX64STVME6E的Datasheet PDF文件第4页浏览型号M25PX64STVME6E的Datasheet PDF文件第5页浏览型号M25PX64STVME6E的Datasheet PDF文件第6页浏览型号M25PX64STVME6E的Datasheet PDF文件第7页 
M25PX64  
64-Mbit, dual I/O, 4-Kbyte subsector erase,  
serial Flash memory with 75 MHz SPI bus interface  
Features  
SPI bus compatible serial interface  
75 MHz (maximum) clock frequency  
2.7 V to 3.6 V single supply voltage  
Dual input/output instructions resulting in an  
VDFPN8 (ME)  
equivalent clock frequency of 150 MHz:  
8 × 6 mm (MLP8)  
– Dual Output Fast Read instruction  
– Dual Input Fast Program instruction  
Whole memory continuously read by sending  
once a Fast Read or a Dual Output Fast Read  
instruction and an address  
64 Mbit Flash memory  
– Uniform 4-Kbyte subsectors  
– Uniform 64-Kbyte sectors  
SO16 (MF)  
300 mils width  
Additional 64-byte user-lockable, one-time  
programmable (OTP) area  
Erase capability  
– Subsector (4-Kbyte) granularity  
– Sector (64-Kbyte) granularity  
– Bulk Erase (32 Mbit) in 35 s (typical with  
V
= 9 V)  
PP  
Write protections  
– Software write protection applicable to  
every 64-Kbyte sector (volatile lock bit)  
– Hardware write protection: protected area  
size defined by three non-volatile bits (BP0,  
BP1 and BP2)  
Deep Power-down mode: 5 µA (typical)  
Electronic signature  
– JEDEC standard two-byte signature  
(7117h)  
– Unique ID code (UID) with 16 bytes read-  
only, available upon customer request  
More than 100 000 write cycles per sector  
More than 20 year data retention  
Packages  
– ECOPACK® (RoHS compliant)  
November 2007  
Rev 1  
1/66  
www.st.com  
1

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M25PX64STVME6TG NUMONYX

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Flash, 8MX8, PDSO8,
M25PX64STVME6TP NUMONYX

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