5秒后页面跳转
M25PX64STVME6G PDF预览

M25PX64STVME6G

更新时间: 2024-01-07 15:27:41
品牌 Logo 应用领域
恒忆 - NUMONYX 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
68页 1429K
描述
EEPROM, 8MX8, Serial, CMOS, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8

M25PX64STVME6G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DFP
包装说明:HVSON, SOLCC8,.3针数:8
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.33
Is Samacsys:N最大时钟频率 (fCLK):75 MHz
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-N8
长度:8 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:8
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8MX8
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC8,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:6 mm最长写入周期时间 (tWC):15 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

M25PX64STVME6G 数据手册

 浏览型号M25PX64STVME6G的Datasheet PDF文件第2页浏览型号M25PX64STVME6G的Datasheet PDF文件第3页浏览型号M25PX64STVME6G的Datasheet PDF文件第4页浏览型号M25PX64STVME6G的Datasheet PDF文件第5页浏览型号M25PX64STVME6G的Datasheet PDF文件第6页浏览型号M25PX64STVME6G的Datasheet PDF文件第7页 
M25PX64  
64-Mbit, dual I/O, 4-Kbyte subsector erase,  
serial flash memory with 75 MHz SPI bus interface  
Preliminary Data  
Features  
„ SPI bus compatible serial interface  
„ 75 MHz (maximum) clock frequency  
„ 2.7 V to 3.6 V single supply voltage  
„ Dual input/output instructions resulting in an  
VDFPN8 (ME)  
equivalent clock frequency of 150 MHz:  
8 × 6 mm (MLP8)  
– Dual output fast read instruction  
– Dual input fast program instruction  
„ Whole memory continuously read by sending  
once a fast read or a dual output fast read  
instruction and an address  
„ 64 Mbit Flash memory  
– Uniform 4-Kbyte subsectors  
– Uniform 64-Kbyte sectors  
SO16 (MF)  
300 mils width  
„ Additional 64-byte user-lockable, one-time  
programmable (OTP) area  
„ Erase capability  
– Subsector (4-Kbyte) granularity  
– Sector (64-Kbyte) granularity  
– Bulk erase (64 Mbits) in 68 s (typical)  
„ Write protections  
– Software write protection applicable to  
every 64-Kbyte sector (volatile lock bit)  
TBGA 6x8 mm  
– Hardware write protection: protected area  
size defined by three non-volatile bits (BP0,  
BP1 and BP2)  
„ Deep power-down mode: 5 μA (typical)  
„ Electronic signature  
– JEDEC standard two-byte signature  
(7117h)  
– Unique ID code (UID) with 16 bytes read-  
only, available upon customer request  
„ More than 100 000 write cycles per sector  
„ More than 20 years data retention  
„ Packages  
– RoHS compliant  
February 2009  
Rev 4  
1/68  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.numonyx.com  
1

与M25PX64STVME6G相关器件

型号 品牌 获取价格 描述 数据表
M25PX64STVME6GB NUMONYX

获取价格

Flash, 8MX8, PDSO8,
M25PX64STVME6P NUMONYX

获取价格

EEPROM, 8MX8, Serial, CMOS, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8
M25PX64STVME6PB NUMONYX

获取价格

Flash, 8MX8, PDSO8,
M25PX64STVME6TG NUMONYX

获取价格

EEPROM, 8MX8, Serial, CMOS, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8
M25PX64STVME6TGB NUMONYX

获取价格

Flash, 8MX8, PDSO8,
M25PX64STVME6TP NUMONYX

获取价格

EEPROM, 8MX8, Serial, CMOS, PDSO8, 8 X 6 MM, ROHS COMPLIANT, VDFPN-8
M25PX64STVMF3PBA NUMONYX

获取价格

Flash, 8MX8, PDSO16,
M25PX64STVMF3TGBA NUMONYX

获取价格

Flash, 8MX8, PDSO16,
M25PX64STVMF6E NUMONYX

获取价格

Flash, 8MX8, PDSO16, 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOP-16
M25PX64-STVMF6E NUMONYX

获取价格

64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interf