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M24LR64-RMB6/2 PDF预览

M24LR64-RMB6/2

更新时间: 2024-01-30 23:00:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
128页 1056K
描述
IC,SERIAL EEPROM,8KX8,CMOS,LLCC,8PIN,PLASTIC

M24LR64-RMB6/2 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
数据保留时间-最小值:40耐久性:100000 Write/Erase Cycles
I2C控制字节:1010CDDRJESD-30 代码:R-PDSO-N8
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8端子数量:8
字数:8192 words字数代码:8000
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:SON封装等效代码:SOLCC8,.12,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL电源:2/5 V
认证状态:Not Qualified串行总线类型:I2C
最大待机电流:0.00003 A子类别:EEPROMs
最大压摆率:0.0007 mA表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL写保护:SOFTWARE
Base Number Matches:1

M24LR64-RMB6/2 数据手册

 浏览型号M24LR64-RMB6/2的Datasheet PDF文件第2页浏览型号M24LR64-RMB6/2的Datasheet PDF文件第3页浏览型号M24LR64-RMB6/2的Datasheet PDF文件第4页浏览型号M24LR64-RMB6/2的Datasheet PDF文件第5页浏览型号M24LR64-RMB6/2的Datasheet PDF文件第6页浏览型号M24LR64-RMB6/2的Datasheet PDF文件第7页 
M24LR64-R  
64 Kbit EEPROM with password protection & dual interface:  
400 kHz I²C serial bus & ISO 15693 RF protocol at 13.56 MHz  
Features  
I2C interface  
2
Two-wire I C serial interface supports 400 kHz  
SO8 (MN)  
150 mils width  
protocol  
Single supply voltage:  
– 1.8 V to 5.5 V  
Byte and Page Write (up to 4 bytes)  
Random and Sequential Read modes  
Self-timed programming cycle  
UFDFPN8 (MB)  
2 × 3 mm  
Automatic address incrementing  
Enhanced ESD/latch-up protection  
Contactless interface  
ISO 15693 and ISO 18000-3 mode 1  
compatible  
13.56 MHz 7k Hz carrier frequency  
TSSOP8 (DW)  
To tag: 10% or 100% ASK modulation using  
1/4 (26 Kbit/s) or 1/256 (1.6 Kbit/s) pulse  
position coding  
From tag: load modulation using Manchester  
coding with 423 kHz and 484 kHz subcarriers  
in low (6.6 kbit/s) or high (26 kbit/s) data rate  
mode. Supports the 53 kbit/s data rate with  
Fast commands  
Internal tuning capacitance: 27.5 pF  
64-bit unique identifier (UID)  
Read Block & Write (32-bit Blocks)  
Sawn wafer on UV tape  
Memory  
More than 1 Million write cycles  
64 Kbit EEPROM organized into:  
Multiple password protection in RF mode  
2
2
– 8192 bytes in I C mode  
Single password protection in I C mode  
– 2048 blocks of 32 bits in RF mode  
More than 40-year data retention  
Package  
Write time  
2
– I C: 5 ms (Max.)  
®
– ECOPACK2 (RoHS compliant and  
– RF: 5.75 ms including the internal Verify  
time  
Halogen-free)  
December 2010  
Doc ID 15170 Rev 12  
1/128  
www.st.com  
1

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