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M24LR64-RMB6T/2 PDF预览

M24LR64-RMB6T/2

更新时间: 2024-11-14 05:44:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
128页 1050K
描述
64 Kbit EEPROM with password protection & dual interface: 400 kHz I²C serial bus & ISO 15693 RF protocol at 13.56 MHz

M24LR64-RMB6T/2 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DFP包装说明:2 X 3 MM, ROHS COMPLIANT, UFDFPN-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.77Is Samacsys:N
备用内存宽度:8最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
I2C控制字节:10100DDRJESD-30 代码:R-PDSO-N8
JESD-609代码:e4长度:3 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:32湿度敏感等级:1
功能数量:1端子数量:8
字数:2048 words字数代码:2000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2KX32
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC8,.12,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:0.6 mm
串行总线类型:I2C最大待机电流:0.00003 A
子类别:EEPROMs最大压摆率:0.0007 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:2 mm
最长写入周期时间 (tWC):5 ms写保护:SOFTWARE
Base Number Matches:1

M24LR64-RMB6T/2 数据手册

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M24LR64-R  
64 Kbit EEPROM with password protection & dual interface:  
400 kHz I²C serial bus & ISO 15693 RF protocol at 13.56 MHz  
Features  
I2C interface  
2
Two-wire I C serial interface supports 400 kHz  
protocol  
Single supply voltage:  
SO8 (MN)  
150 mils width  
– 1.8 V to 5.5 V  
Byte and Page Write (up to 4 bytes)  
Random and Sequential Read modes  
Self-timed programming cycle  
Automatic address incrementing  
Enhanced ESD/latch-up protection  
UFDFPN8 (MB)  
2 × 3 mm  
Contactless interface  
ISO 15693 and ISO 18000-3 mode 1 compliant  
13.56 MHz 7k Hz carrier frequency  
To tag: 10% or 100% ASK modulation using  
1/4 (26 Kbit/s) or 1/256 (1.6 Kbit/s) pulse  
position coding  
TSSOP8 (DW)  
From tag: load modulation using Manchester  
coding with 423 kHz and 484 kHz subcarriers  
in low (6.6 kbit/s) or high (26 kbit/s) data rate  
mode. Supports the 53 kbit/s data rate with  
Fast commands  
Internal tuning capacitance: 27.5 pF  
64-bit unique identifier (UID)  
Read Block & Write (32-bit Blocks)  
Memory  
Sawn wafer on UV tape  
64 Kbit EEPROM organized into:  
2
– 8192 bytes in I C mode  
– 2048 blocks of 32 bits in RF mode  
Multiple password protection in RF mode  
2
Single password protection in I C mode  
Write time  
2
More than 40-year data retention  
– I C: 5 ms (Max.)  
Package  
– RF: 5.75 ms including the internal Verify  
time  
®
– ECOPACK2 (RoHS compliant and  
Halogen-free)  
More than 1 Million write cycles  
June 2010  
Doc ID 15170 Rev 10  
1/128  
www.st.com  
1

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