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M24LR64-RMN6T/2 PDF预览

M24LR64-RMN6T/2

更新时间: 2024-09-28 05:44:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
128页 1050K
描述
64 Kbit EEPROM with password protection & dual interface: 400 kHz I²C serial bus & ISO 15693 RF protocol at 13.56 MHz

M24LR64-RMN6T/2 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.76备用内存宽度:8
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010CDDR
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:65536 bit
内存集成电路类型:EEPROM内存宽度:32
湿度敏感等级:1功能数量:1
端子数量:8字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2KX32封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:I2C
最大待机电流:0.00003 A子类别:EEPROMs
最大压摆率:0.0007 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mm最长写入周期时间 (tWC):5 ms
写保护:SOFTWAREBase Number Matches:1

M24LR64-RMN6T/2 数据手册

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M24LR64-R  
64 Kbit EEPROM with password protection & dual interface:  
400 kHz I²C serial bus & ISO 15693 RF protocol at 13.56 MHz  
Features  
I2C interface  
2
Two-wire I C serial interface supports 400 kHz  
protocol  
Single supply voltage:  
SO8 (MN)  
150 mils width  
– 1.8 V to 5.5 V  
Byte and Page Write (up to 4 bytes)  
Random and Sequential Read modes  
Self-timed programming cycle  
Automatic address incrementing  
Enhanced ESD/latch-up protection  
UFDFPN8 (MB)  
2 × 3 mm  
Contactless interface  
ISO 15693 and ISO 18000-3 mode 1 compliant  
13.56 MHz 7k Hz carrier frequency  
To tag: 10% or 100% ASK modulation using  
1/4 (26 Kbit/s) or 1/256 (1.6 Kbit/s) pulse  
position coding  
TSSOP8 (DW)  
From tag: load modulation using Manchester  
coding with 423 kHz and 484 kHz subcarriers  
in low (6.6 kbit/s) or high (26 kbit/s) data rate  
mode. Supports the 53 kbit/s data rate with  
Fast commands  
Internal tuning capacitance: 27.5 pF  
64-bit unique identifier (UID)  
Read Block & Write (32-bit Blocks)  
Memory  
Sawn wafer on UV tape  
64 Kbit EEPROM organized into:  
2
– 8192 bytes in I C mode  
– 2048 blocks of 32 bits in RF mode  
Multiple password protection in RF mode  
2
Single password protection in I C mode  
Write time  
2
More than 40-year data retention  
– I C: 5 ms (Max.)  
Package  
– RF: 5.75 ms including the internal Verify  
time  
®
– ECOPACK2 (RoHS compliant and  
Halogen-free)  
More than 1 Million write cycles  
June 2010  
Doc ID 15170 Rev 10  
1/128  
www.st.com  
1

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