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M24C01MN1 PDF预览

M24C01MN1

更新时间: 2024-11-07 20:47:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
17页 141K
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M24C01MN1 数据手册

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M24C16, M24C08  
M24C04, M24C02, M24C01  
16/8/4/2/1 Kbit Serial I²C Bus EEPROM  
2
Two Wire I C Serial Interface  
Supports 400 kHz Protocol  
Single Supply Voltage:  
– 4.5V to 5.5V for M24Cxx  
– 2.5V to 5.5V for M24Cxx-W  
– 1.8V to 3.6V for M24Cxx-R  
Hardware Write Control  
8
1
BYTE and PAGE WRITE (up to 16 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
PSDIP8 (BN)  
0.25 mm frame  
Automatic Address Incrementing  
8
8
Enhanced ESD/Latch-Up Behaviour  
1 Million Erase/Write Cycles (minimum)  
40 Year Data Retention (minimum)  
1
1
SO8 (MN)  
150 mil width  
TSSOP8 (DW)  
169 mil width  
DESCRIPTION  
These electrically erasable programmable memo-  
ry (EEPROM) devices are fabricated with STMi-  
croelectronics’  
High  
Endurance,  
Single  
Polysilicon, CMOS technology. This guarantees  
an endurance typically well above one million  
Erase/Write cycles, with a data retention of  
40 years. The memories are organised as 2048/  
1024 x 8 bit (M24C16, M24C08) and 512/256/128  
x 8 bit (M24C04, M24C02, M24C01), and operate  
with a power supply down to 2.5 V (for the -W ver-  
Figure 1. Logic Diagram  
V
CC  
3
Table 1. Signal Names  
E0-E2  
SDA  
E0, E1, E2  
SDA  
Chip Enable Inputs  
M24Cxx  
Serial Data/Address Input/  
Output  
SCL  
WC  
SCL  
WC  
Serial Clock  
Write Control  
Supply Voltage  
Ground  
V
V
CC  
SS  
V
SS  
AI02033  
March 1999  
1/17  

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