Datasheet > LY6225616UV

LY6225616UV

更新时间： 2022-12-29 00:04:54

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
14页	175K
描述
256K X 16 BIT LOW POWER CMOS SRAM

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数据手册

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LY6225616UV 数据手册

LY6225616

256K X 16 BIT LOW POWER CMOS SRAM

Rev. 1.3

TRUTH TABLE

I/O OPERATION

MODE

CE# OE# WE# LB# UB#

SUPPLY CURRENT

DQ0-DQ7

DQ8-DQ15

High – Z

Standby

I_SB1

High – Z

D_OUT

High – Z

D_OUT

D_IN

High – Z

D_IN

High – Z

D_OUT

High – Z

D_IN

Output Disable

_CC,I_CC1

Read

Write

I_CC,I_CC1

D_IN

Note: H = V_IH, L = V_IL, X = Don't care.

DC ELECTRICAL CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN.

4.5

2.4

- 0.2

- 1

TYP. ^*4MAX.

UNIT

PARAMETER

Supply Voltage

V_CC

5.0

5.5

V_CC+0.3

0.6

Input High Voltage

Input Low Voltage

Input Leakage Current

Output Leakage

Current

V_IH

V_IL

I_LI

_CC≧ V_IN≧ V_SS

_CC≧ V_OUT≧ V_SS,

Output Disabled

I_LO

- 1

Output High Voltage

Output Low Voltage

V_OHI_OH= -1mA

V_OLI_OL= 2mA

2.4

0.4

- 45

- 55

- 70

Cycle time = Min.

I_CC

CE# = V_IL, I_I/O= 0mA

Other pins at V_ILor V_IH

Average Operating

Power supply Current

Cycle time = 1 s

I_CC1

CE# = 0.2V , I_I/O= 0mA

Other pins at 0.2V or V_CC- 0.2V

LL/LLE/LLI

CE# ≧V_CC- 0.2V

I_SB1Others at 0.2V or

_CC- 0.2V

SL^*5

℃

Standby Power

Supply Current

SLE^*5

SLI^*5

SL/SLE/SLI

Notes:

1. V_IH(max) = V_CC+ 3.0V for pulse width less than 10ns.

2. V_IL(min) = V_SS- 3.0V for pulse width less than 10ns.

3. Over/Undershoot specifications are characterized, not 100% tested.

4. Typical values are included for reference only and are not guaranteed or tested.

℃

Typical values are measured at V_CC= V_CC(TYP.) and T_A= 25

5. This parameter is measured at VCC = 3.0V

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1 2 3 456 7 8...14

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