Datasheet > LY6225616UV

LY6225616UV

更新时间： 2022-12-29 00:04:54

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
14页	175K
描述
256K X 16 BIT LOW POWER CMOS SRAM

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中文翻译

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数据手册

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LY6225616UV 数据手册

LY6225616

256K X 16 BIT LOW POWER CMOS SRAM

Rev. 1.3

FEATURES

GENERAL DESCRIPTION

The LY6225616 is a 4,194,304-bit low power CMOS

static random access memory organized as 262,144

words by 16 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

Fast access time : 45/55/70ns

Low power consumption:

Operating current : 45/40/30mA (TYP.)

Standby current : 5μA@5V(TYP.) LL/SL version

3μA@3V(TYP.) SL version

Single 4.5V ~ 5.5V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data byte control : LB# (DQ0 ~ DQ7)

UB# (DQ8 ~ DQ15)

Data retention voltage : 1.5V (MIN.)

Green package available

Package : 44-pin 400 mil TSOP-II

48-ball 6mm x 8mm TFBGA

The LY6225616 is well designed for low power

application, and particularly well suited for battery

back-up nonvolatile memory application.

The LY6225616 operates from a single power

supply of 4.5V ~ 5.5V and all inputs and outputs are

fully TTL compatible

PRODUCT FAMILY

Operating

Product

Family

Power Dissipation

Speed

Vcc Range

Temperatur

Standby(I^SB1,TYP.)

Operating(Icc,TYP.)

0 ~ 70℃

LY6225616(LL)

LY6225616(LLE)

LY6225616(LLI)

LY6225616(SL)

LY6225616(SLE)

LY6225616(SLI)

4.5 ~ 5.5V

45/55/70ns

5µA@5V

45/40/30mA

-20 ~ 80℃

-40 ~ 85℃

0 ~ 70℃

3µA@3V 5µA@5V

-20 ~ 80℃

-40 ~ 85℃

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

123 4 5 6 7...14

中文翻译

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