Datasheet > LY61L6416MV

LY61L6416MV

更新时间： 2024-11-05 05:44:23

品牌	Logo	应用领域
台湾来扬 - LYONTEK		静态存储器
页数	文件大小	规格书
14页	176K
描述
64K X 16 BIT HIGH SPEED CMOS SRAM

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LY61L6416MV 数据手册

LY61L6416

64K X 16 BIT HIGH SPEED CMOS SRAM

Rev. 1.8

REVISION HISTORY

Revision

Rev. 1.0

Rev. 1.1

Description

Initial Issue

Deleted Icc1 Spec.

Revised Truth Table

Issue Date

Jul.25.2004

Sep.21.2004

Rev. 1.2

Rev. 1.3

Rev. 1.4

Deleted Data Retention Waveform(2)(UB & LB controlled)

Revised the typo in Page 1

Added PKG Type : 48-ball 6mm x 8mm TFBGA

Revised Test Condition of I_SB1/I_DR

Added I Grade Spec.

Jun.20.2005

Feb.13.2006

Jun.13.2007

Rev. 1.5

Feb.4.2008

Revised V_TERMto V_T1and V_T2

Added -20ns Spec.

Added LL Spec.

Rev. 1.6

Rev. 1.7

Rev. 1.8

Mar.31.2008

Aug.7.2008

Apr.17.2009

Revised Test Condition of I_SB

FEATURES ORDERING INFORMATION

Revised

Lead free and green package available to Green package

available

ABSOLUTE MAXIMUN RATINGS

Deleted T_SOLDERin

ORDERING INFORMATION

Added packing type in

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

12 3 4 5 6 7...14

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