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LTC2320-16 PDF预览

LTC2320-16

更新时间: 2022-02-26 09:30:19
品牌 Logo 应用领域
凌特 - Linear /
页数 文件大小 规格书
30页 1359K
描述
Quad, 16-Bit, 5Msps/Ch Simultaneous Sampling ADC

LTC2320-16 数据手册

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LTC2325-16  
ADC TIMING CHARACTERISTICS The l denotes the specifications which apply over the full operating  
temperature range, otherwise specifications are at TA = 25°C (Note 4).  
SYMBOL  
PARAMETER  
CONDITIONS  
(Note 11)  
(Note 11)  
(Note 11)  
MIN  
TYP  
MAX  
UNITS  
ns  
l
l
l
t
t
t
Bus Relinquish Time After CNV↑  
SDO Valid Delay from CNV↓  
SCK Delay Time to CNV↑  
3
3
DCNVSDOZ  
DCNVSDOV  
DSCKHCNVH  
ns  
0
ns  
CMOS I/O Mode, DDR, CMOS/LVDS = GND, SDR/ DDR = OV  
DD  
l
l
l
l
l
l
l
l
t
t
t
t
t
t
t
t
SCK Period  
18.2  
8.2  
8.2  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
SCK  
SCK High Time  
SCK Low Time  
SCKH  
SCKL  
SDO Data Remains Valid Delay from CLKOUTC = 5pF (Note 12)  
1.5  
4.5  
3
HSDO_DDR  
DSCKCLKOUT  
DCNVSDOZ  
DCNVSDOV  
DSCKHCNVH  
L
SCK to CLKOUT Delay  
(Note 12)  
(Note 11)  
(Note 11)  
(Note 11)  
2
Bus Relinquish Time After CNV↑  
SDO Valid Delay from CNV↓  
SCK Delay Time to CNV↑  
3
0
LVDS I/O Mode, SDR, CMOS/LVDS = OV , SDR/DDR = GND  
DD  
l
l
l
l
l
l
t
t
t
t
t
t
SCK Period  
9.1  
4.1  
4.1  
0
ns  
ns  
ns  
ns  
ns  
ns  
SCK  
SCK High Time  
SCK Low Time  
SCKH  
SCKL  
SDO Data Remains Valid Delay from CLKOUTC = 5pF OV = 2.5V  
1.5  
4
HSDO_SDR  
DSCKCLKOUT  
DSCKHCNVH  
L
DD  
SCK to CLKOUT Delay  
OV = 2.5V  
2
DD  
SCK Delay Time to CNV↑  
(Note 11)  
0
LVDS I/O Mode, DDR, CMOS/LVDS = OV , SDR/DDR = OV  
DD  
DD  
l
l
l
l
l
l
t
t
t
t
t
t
SCK Period  
18.2  
8.2  
8.2  
0
ns  
ns  
ns  
ns  
ns  
ns  
SCK  
SCK High Time  
SCK Low Time  
SCKH  
SCKL  
SDO Data Remains Valid Delay from CLKOUTC = 5pF OV = 2.5V  
1.5  
4
HSDO_DDR  
DSCKCLKOUT  
DSCKHCNVH  
L
DD  
SCK to CLKOUT Delay  
OV = 2.5V  
2
DD  
SCK Delay Time to CNV↑  
(Note 11)  
0
Note 1: Stresses beyond those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. Exposure to any Absolute  
Maximum Rating condition for extended periods may affect device  
reliability and lifetime.  
untrimmed deviation from ideal first and last code transitions and includes  
the effect of offset error.  
Note 8: All specifications in dB are referred to a full-scale 4.096V input  
with REF = 4.096V.  
Note 2: All voltage values are with respect to GND.  
Note 9: When REFOUT1,2,3,4 is overdriven, the internal reference buffer  
Note 3: When these pin voltages are taken below GND, or above V or  
must be turned off by setting REFBUFEN = 0V.  
DD  
OV , they will be clamped by internal diodes. This product can handle input  
DD  
Note 10: f  
= 5MHz, I  
varies proportionally with sample rate.  
SMPL  
REFOUT1,2,3,4  
currents up to 100mA below GND, or above V or OV , without latch-up.  
DD  
DD  
Note 11: Guaranteed by design, not subject to test.  
Note 12: Parameter tested and guaranteed at OV = 1.71V and OV = 2.5V.  
Note 13: t  
rising edge capture.  
Note 14: Temperature coefficient is calculated by dividing the maximum  
change in output voltage by the specified temperature range.  
Note 15: CNV is driven from a low jitter digital source, typically at OV  
logic levels.  
Note 4: V = 5V, OV = 2.5V, REFOUT1,2,3,4 = 4.096V, f = 5MHz.  
SMPL  
DD  
DD  
DD  
DD  
Note 5: Recommended operating conditions.  
of 9.1ns allows a shift clock frequency up to 105MHz for  
SCK  
Note 6: Integral nonlinearity is defined as the deviation of a code from a  
straight line passing through the actual endpoints of the transfer curve.  
The deviation is measured from the center of the quantization band.  
Note 7: Bipolar zero error is the offset voltage measured from –0.5LSB  
when the output code flickers between 0000 0000 0000 0000 and 1111  
1111 1111 1111. Full-scale bipolar error is the worst-case of –FS or +FS  
DD  
232516fa  
6
For more information www.linear.com/LTC2325-16  

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