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LT1E45A

更新时间： 2024-11-03 22:51:47
品牌 Logo 应用领域
夏普 - SHARP 可见光LED光电
页数 文件大小 规格书
1页 17K
描述
Chip LED Device

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中文翻译

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LT1E45A 技术参数

是否Rohs认证：不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.92
Is Samacsys：N颜色：YELLOW GREEN
配置：SINGLE最大正向电流：0.03 A
JESD-609代码：e0透镜类型：COLORLESS TRANSPARENT
标称发光强度：29.0 mcd安装特点：SURFACE MOUNT
功能数量：1端子数量：2
最高工作温度：80 °C最低工作温度：-30 °C
光电设备类型：SINGLE COLOR LED总高度：1.2 mm
包装方法：BULK峰值波长：565 nm
形状：RECTANGULAR尺寸：2.7 mm
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子节距：2.7 mmBase Number Matches：1

LT1E45A 数据手册

  
Chip LED Device  
LT1E45A  
High-luminosity, Side Emission Chip LED Device for LCD Backlight  
Outline Dimensions  
(Unit:mm)  
General Description  
Sharp's LT1E45A(high-luminosity, yellow-green) is thin  
type compact size chip LED device.(2.7 x1.3 x 1.2mm)  
It is suitable for LCD backlight of portable equipment  
such as cellular phones and pagers etc.  
2.7  
Reflector case  
Features  
(1) Compact, thin type(2.7x1.3x1.2mm thickness)  
(2) High-luminosity, yellow-green  
LED chip  
(3) Reflector is designed for the most suitable characteristics  
*Radiation characteristics  
Electrode  
Horizonatal  
(130˚)  
Vertical(100˚)  
2
1
(2θ1/2)  
(4) Tape packaged product( 3 000pcs./reel)  
Resist  
Terminal connection  
Anode  
1
2
Cathode  
Applications  
LCD backlight of portable equipment such as  
cellular phones and pagers  
2
1
* Duty ratio=1/10  
Absolute Maximum Ratings  
(Ta=25˚C)  
Pulse width=0.1ms  
Symbol  
Parameter  
Rating  
Unit  
mW  
mA  
mA  
Power dissipation  
Forward current  
P
IF  
84  
30  
Side emission chip LED device  
IFM  
*1 Peak forward current  
50  
0.40  
Electrode for soldering  
DC  
Pulse  
mA/˚C  
Derating current  
Light  
0.67  
V
˚C  
˚C  
5.0  
Reverse voltage  
VR  
LED  
Reverse side  
- 25 to +85  
Operating temperature  
Storage temperature  
Topr  
Tstg  
- 25 to +100  
Electro-optical Characteristics  
(Ta=25˚C)  
Unit  
Typ.  
Parameter  
Forward voltage  
Symbol  
VF  
Condition  
2.1  
V
*2 Luminous intensity  
Peak emission wavelength  
IV  
(28)  
mcd  
nm  
nm  
µA  
pF  
IF=20mA  
P
λ
565  
30  
Spectrum radiation bandwidth  
∆λ  
IR  
Reverse current  
MAX.10  
35  
VR=4V  
Ct  
Terminal capacitance  
V=0V, f=1MHz  
*2 Measured by Sharp by EG & G MODEL550 (RADIOMETER/PHOTOMETER SYSTEM)  
(Notice)  
• In the absence of device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices  
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.  
• Specifications are subject to change without notice for improvement.  
(Internet)  
• Data for Sharp's optoelectronic/power devices is provided for internet. ( Address http://www.sharp.co.jp/ecg/)  
As of January 1997  
Tec.L970103  
1

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