Datasheet > LT1162_15

LT1162_15

更新时间： 2024-11-14 01:17:31

品牌	Logo	应用领域
凌特 - Linear		/
页数	文件大小	规格书
16页	239K
描述
Half-/Full-Bridge N-Channel Power MOSFET Drivers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

LT1162_15 数据手册

LT1160/LT1162

Half-/Full-Bridge

N-Channel

Power MOSFET Drivers

FEATURES

DESCRIPTIO

The LT^®1160/LT1162 are cost effective half-/full-bridge

N-channel power MOSFET drivers. The floating driver can

drivethetopsideN-channelpowerMOSFETsoperatingoff

a high voltage (HV) rail of up to 60V.

■

Floating Top Driver Switches Up to 60V

■

Drives Gate of Top N-Channel MOSFET

above Load HV Supply

■

180ns Transition Times Driving 10,000pF

■

Adaptive Nonoverlapping Gate Drives Prevent

The internal logic prevents the inputs from turning on the

power MOSFETs in a half-bridge at the same time. Its

unique adaptive protection against shoot-through cur-

rents eliminates all matching requirements for the two

MOSFETs. This greatly eases the design of high efficiency

motor control and switching regulator systems.

Shoot-Through

■

Top Drive Protection at High Duty Cycles

■

TTL/CMOS Input Levels

■

Undervoltage Lockout with Hysteresis

■

Operates at Supply Voltages from 10V to 15V

■

Separate Top and Bottom Drive Pins

Duringlowsupplyorstart-upconditions,theundervoltage

lockout actively pulls the driver outputs low to prevent the

power MOSFETs from being partially turned on. The 0.5V

hysteresis allows reliable operation even with slowly vary-

ing supplies.

APPLICATIO S

■

PWM of High Current Inductive Loads

■

Half-Bridge and Full-Bridge Motor Control

■

Synchronous Step-Down Switching Regulators

TheLT1162isadualversionoftheLT1160andisavailable

in a 24-pin PDIP or in a 24-pin SO Wide package.

■

3-Phase Brushless Motor Drive

■

High Current Transducer Drivers

■

, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.

All other trademarks are the property of their respective owners.

Class D Power Amplifiers

TYPICAL APPLICATIO

1N4148

HV = 60V MAX

1000µF

100V

BOOST

T GATE DR

T GATE FB

T SOURCE

12V

10µF

25V

IRFZ44

1µF

BOOST

UV OUT

IN TOP

LT1160

B GATE DR

IN TOP IN BOTTOM T GATE DR B GATE DR

IRFZ44

PWM

0Hz TO 100kHz

IN BOTTOM B GATE FB

SGND

PGND

1160 TA01

11602fb

12 3 4 5 6 7...16

中文翻译

下载PDF

与LT1162_15相关器件

型号	品牌	获取价格	描述	数据表
LT1162CN	Linear	获取价格	Half-/Full-Bridge N-Channel Power MOSFET Drivers
LT1162CN	Linear Systems	获取价格	Half-/Full-Bridge N-Channel Power MOSFET Drivers
LT1162CN	ADI	获取价格	Interface Circuit
LT1162CN#PBF	Linear	获取价格	IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1162CSW	Linear Systems	获取价格	Half-/Full-Bridge N-Channel Power MOSFET Drivers
LT1162CSW	Linear	获取价格	Half-/Full-Bridge N-Channel Power MOSFET Drivers
LT1162CSW#PBF	Linear	获取价格	LT1162 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: SO; Pins: 24; Temperat
LT1162CSW#TR	Linear	获取价格	LT1162 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: SO; Pins: 24; Temperat
LT1162IN	Linear	获取价格	Half-/Full-Bridge N-Channel Power MOSFET Drivers
LT1162IN	Linear Systems	获取价格	Half-/Full-Bridge N-Channel Power MOSFET Drivers

与LT1162_15相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

25
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

LT1162_15

LT1162_15 数据手册

与LT1162_15相关器件

与LT1162_15相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

LT1162_15

LT1162_15 数据手册

与LT1162_15相关器件

与LT1162_15相关文章

您还可以找

您在本页遇到什么问题？