LSP1000 thru LSP1012
ENHANCED PERFORMANCE
SURFACE MOUNT "EPSM" PACKAGED DEVICES
M I C R O W A V E P R O D U C T S D I V I S I O N
PRODUCT PREVIEW
KEY FEATURES
DESCRIPTION
Our EPSM packaged devices are designed for the most demanding
commercial and Military requirements where the inconsistency of
performance inherent in plastic surface mount packages cannot be
tolerated. These package styles extend the surface mount construction
format to 6 GHz for high performance wireless applications including
VCO's, limiters, pin switches and pin attenuators. Select PIN diodes for
switching, attenuation or limiting through 6 GHz. They are available in
multiple chip configuration as well as outlines which directly replace SOT-
23 and SOD-323 devices. Other devices and values are always available -
contact our applications engineering department for more details.
!"Frequencies from VHF to 6
GHz
!"Lower Parasitics
!"Mil Grade Ceramic/Epoxy
Amalgam Construction
!"Dense S O2 Junction
i
Passivation
!"Superior
Consistency/Repeatability
!"Footprints Available for
SOT-23/SOD-323/SOD-123
!"Priced for Commercial
Products
!"Tape & Reel for Volume
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Pick & Place
PIN DIODE DEVICES FOR WIRELESS ATTENUATORS,
SWITCHES AND LIMITERS
APPLICATIONS/BENEFITS
!"High performance wireless
surface mounting including:
!"GSM
ABSOLUTE MAXIMUM RATINGS AT 25°C
Forward Current (IF):
Power Dissipation (PD):
1 Amp (1µs Pulse)
!"TAGS
500 mW
!"WANS
(Derate to 0 at max TJ)
!"PCS
!"AMPS
Peak Inverse Volts (PIV):
Same as VB
!"DECT
!"CELLULAR
Junction Temp. (Operating):
-65°C to + 125°C
Storage Temp. (Non-Operating): -65°C to + 125°C
Leakage:
<50 nA @ 80%
VB@ 25°C
TABLE 1
TEST CONDITIONS:
C
MAX.
@ V
R
R
S
@ I
T
L
TYP.
APPLIC
-TION
T
F
VB @ 10 µA
CT @ 1 MHz
IR = 6 mA
RS @ 100 MHz
TL @ IF = 10 mA
MODEL
LSP1000
VB
MAX.
2.5Ω @
> 35
.28 @ 5V
5 mA
80nS
SWITCH
.32 @
50V
4Ω @
100 mA
ATTENU-
ATOR
LSP1002
> 100
1500nS
.75 @
20V
0.6Ω @
10 mA
LSP1004
LSP1011
> 35
150nS
SWITCH
.35 @
50V
2Ω @
100 mA
ATTENU-
ATOR
> 200V
2000nS
.35pF @
10V
1.8Ω @
10 mA
LSP1012
> 20V
5nS
LIMITER
Copyright 2000
MSC1618.PDF 2000-11-06
Microsemi
Page 1
Microwave Products Division
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748