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LSP1000 PDF预览

LSP1000

更新时间: 2024-11-04 22:30:59
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
3页 292K
描述
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

LSP1000 数据手册

 浏览型号LSP1000的Datasheet PDF文件第2页浏览型号LSP1000的Datasheet PDF文件第3页 
LSP1000 thru LSP1012  
ENHANCED PERFORMANCE  
SURFACE MOUNT "EPSM" PACKAGED DEVICES  
M I C R O W A V E P R O D U C T S D I V I S I O N  
PRODUCT PREVIEW  
KEY FEATURES  
DESCRIPTION  
Our EPSM packaged devices are designed for the most demanding  
commercial and Military requirements where the inconsistency of  
performance inherent in plastic surface mount packages cannot be  
tolerated. These package styles extend the surface mount construction  
format to 6 GHz for high performance wireless applications including  
VCO's, limiters, pin switches and pin attenuators. Select PIN diodes for  
switching, attenuation or limiting through 6 GHz. They are available in  
multiple chip configuration as well as outlines which directly replace SOT-  
23 and SOD-323 devices. Other devices and values are always available -  
contact our applications engineering department for more details.  
!"Frequencies from VHF to 6  
GHz  
!"Lower Parasitics  
!"Mil Grade Ceramic/Epoxy  
Amalgam Construction  
!"Dense S O2 Junction  
i
Passivation  
!"Superior  
Consistency/Repeatability  
!"Footprints Available for  
SOT-23/SOD-323/SOD-123  
!"Priced for Commercial  
Products  
!"Tape & Reel for Volume  
IMPORTANT:  
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
Pick & Place  
PIN DIODE DEVICES FOR WIRELESS ATTENUATORS,  
SWITCHES AND LIMITERS  
APPLICATIONS/BENEFITS  
!"High performance wireless  
surface mounting including:  
!"GSM  
ABSOLUTE MAXIMUM RATINGS AT 25°C  
Forward Current (IF):  
Power Dissipation (PD):  
1 Amp (1µs Pulse)  
!"TAGS  
500 mW  
!"WANS  
(Derate to 0 at max TJ)  
!"PCS  
!"AMPS  
Peak Inverse Volts (PIV):  
Same as VB  
!"DECT  
!"CELLULAR  
Junction Temp. (Operating):  
-65°C to + 125°C  
Storage Temp. (Non-Operating): -65°C to + 125°C  
Leakage:  
<50 nA @ 80%  
VB@ 25°C  
TABLE 1  
TEST CONDITIONS:  
C
MAX.  
@ V  
R
R
S
@ I  
T
L
TYP.  
APPLIC  
-TION  
T
F
VB @ 10 µA  
CT @ 1 MHz  
IR = 6 mA  
RS @ 100 MHz  
TL @ IF = 10 mA  
MODEL  
LSP1000  
VB  
MAX.  
2.5@  
> 35  
.28 @ 5V  
5 mA  
80nS  
SWITCH  
.32 @  
50V  
4@  
100 mA  
ATTENU-  
ATOR  
LSP1002  
> 100  
1500nS  
.75 @  
20V  
0.6@  
10 mA  
LSP1004  
LSP1011  
> 35  
150nS  
SWITCH  
.35 @  
50V  
2@  
100 mA  
ATTENU-  
ATOR  
> 200V  
2000nS  
.35pF @  
10V  
1.8@  
10 mA  
LSP1012  
> 20V  
5nS  
LIMITER  
Copyright 2000  
MSC1618.PDF 2000-11-06  
Microsemi  
Page 1  
Microwave Products Division  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  

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