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LS914BL0 PDF预览

LS914BL0

更新时间: 2024-11-11 05:43:03
品牌 Logo 应用领域
TSC 二极管开关
页数 文件大小 规格书
2页 102K
描述
500mW High Speed SMD Switching Diode

LS914BL0 技术参数

生命周期:Obsolete包装说明:O-LELF-R2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.39
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-213
JESD-30 代码:O-LELF-R2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:0.15 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

LS914BL0 数据手册

 浏览型号LS914BL0的Datasheet PDF文件第2页 
LS4148/LS4448/LS914B  
500mW High Speed SMD Switching Diode  
Small Signal Diode  
QUADRO Mini-MELF (LS34)  
HERMETICALLY SEALED GLASS  
C
Features  
—Fast switching device(Trr<4.0nS)  
—Surface device type mounting  
—Moisture sensitivity level 1  
B
D
E
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
A
—All External Surfaces are Corrosion Resistant and  
Leads are Readily Solderable  
Unit (mm)  
Min Max  
Unit (inch)  
Min Max  
Dimensions  
Mechanical Data  
A
B
C
D
E
—Case : QUADRO Mini-MELF Package (JEDEC DO-213)  
—High temperature soldering guaranteed : 270°C/10s  
—Polarity : Indicated by cathode band  
—Weight : 29 ± 2.5 mg  
3.30 3.70 0.130 0.146  
1.40 1.60 0.055 0.063  
0.25 0.40 0.010 0.016  
1.25 1.40 0.049 0.055  
1.80  
0.071  
Ordering Information  
Part No.  
LSxxxx L1  
LSxxxx L0  
Package  
Packing  
QUADRO Mini-MELF  
2.5Kpcs / 7" Reel  
QUADRO Mini-MELF 10Kpcs / 13" Reel  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
Value  
Units  
mW  
V
Power Dissipation  
500  
100  
75  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Peak Forward Surge Current  
VRSM  
VRRM  
IFSM  
V
2
A
Non-Repetitive Peak Forward Current  
Mean Forward Current  
IFM  
450  
150  
300  
mA  
mA  
°C/W  
°C  
IO  
Thermal Resistance (Junction to Ambient) (Note 1)  
Junction and Storage Temperature Range  
RθJA  
TJ, TSTG  
-65 to + 200  
Electrical Characteristics  
Type Number  
Symbol  
Min  
Max  
Units  
100  
75  
-
-
IR=100uA  
Reverse Breakdown Voltage  
IR=5uA  
V(BR)  
V
Forward Voltage  
0.62  
0.72  
1.0  
1.0  
25  
LS4448, LS914B  
LS4148  
IF=5.0mA  
VF  
IR  
-
-
-
-
-
-
V
IF=10.0mA  
IF=100.0mA  
VR=20V  
LS4448, LS914B  
nA  
μA  
pF  
ns  
Reverse Leakage Current  
5.0  
4.0  
4.0  
VR=75V  
CJ  
Junction Capacitance  
VR=0, f=1.0MHz  
Trr  
Reverse Recovery Time (Note 2)  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Notes:2. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA  
Version : C09  

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