Datasheet > LS880PT

LS880PT

更新时间： 2024-11-11 05:43:03

品牌	Logo	应用领域
MARKTECH		二极管
页数	文件大小	规格书
1页	136K
描述
Infrared Emitting Diode

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中文翻译

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数据手册

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LS880PT 数据手册

Infrared Emitting Diode

LS880PT

2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25

)

I T E M

Power Output

Forward Voltage

CONDITIONS

IF=50mA

VR=5V

IF=50mA

IFP=50mA

1MHz ,V=0V

IF=10mA

SYMBOL

MIN

TYP

2.5

1.45

MAX

UNIT

1.8

Reverse Current

Peak Wavelength

Spectral Line Half Width

Half Intensity Beam Angle

Rise Time

880

±4

1.5

0.8

-0.5

-1.5

deg.

P/T

V/T

Fall Time

Junction Capacitance

Temp. Coefficient of PO

Temp. Coefficient of VF

mV/

Cathode

Anode

High-output Power

Dimensions (Unit:mm)

FEATURES

Narrow Beam Angle (Excellent)

Compact ( 2mm)

High Reliability in Demanding Environments

Optical Switches

APPLICATIONS

Edge Sensing (Coin Dispenser)

1. ABSOLUTE MAXIMUM RATINGS (Ta=25

)

I T E M

Forward Current (DC)

Forward Current (Pulse)*1

Reverse Voltage

RATINGS

SYMBOL

IFP

UNIT

0.5

Power Dissipation

Operating Temp.

Storage Temp.

120

Topr

Tstg

-20 TO 85

-30 TO 100

100

Junction Temp.

Lead Soldering Temp.*2

*1:Tw=10uS,T=10mS

260

Tls

*2:Time 5 Sec max,Position:Up to 3mm from the body

To purchase this part contact

Marktech Optoelectronics at

OPTRANS

Marktech

Optoelectronics

www.marktechopto.com

2005/6/27 LS880PT

800.984.5337

中文翻译

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