LS301
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
FEATURES
HIGH GAIN
The LS301 is a monolithic pair of high voltage Super-
hFE ≥ 2000 @ 1µA TYP.
COBO ≤ 2.0pF
|VBE1 – VBE2 |= 0.2mV TYP.
100MHz
Beta NPN transistors mounted in a single SOT-23
package. The monolithic dual chip design reduces
parasitics and gives better performance while ensuring
extremely tight matching.
LOW OUTPUT CAPACITANCE
TIGHT VBE MATCHING
HIGH ft
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
The 6 Pin SOT-23 provides ease of manufacturing, and
a lower cost assembly option.
Maximum Temperatures
Storage Temperature
(See Packaging Information).
‐65°C to +200°C
‐55°C to +150°C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
LS301 Features:
250mW
500mW
2.3mW/°C
4.3mW/°C
Very high gain
Tight matching
Low Output Capacitance
Collector Current
5mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
|VBE1 – VBE2
∆|(VBE1 – VBE2)| / ∆T
CHARACTERISTIC
MIN
‐‐
‐‐
TYP
0.2
1
MAX
1
5
UNITS
mV
µV/°C
CONDITIONS
|
Base Emitter Voltage Differential
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
IC = 10µA, VCE = 5V
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
IC = 10µA, VCE = 5V
|IB1 – IB2
|
‐‐
‐‐
0.5
5
1
nA
%
hFE1 /hFE2
DC Current Gain Differential
‐‐
IC = 10µA, VCE = 5V
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVCBO
BVCEO
BVEBO
BVCCO
CHARACTERISTICS
MIN.
TYP.
‐‐
‐‐
‐‐
‐‐
2000
‐‐
2000
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
0.5
0.2
100
2
2
0.5
‐‐
UNITS
CONDITIONS
Click To Buy
Collector to Base Voltage
Collector to Emitter Voltage
Emitter‐Base Breakdown Voltage
Collector to Collector Voltage
18
18
6.2
100
‐‐
2000
‐‐
‐‐
‐‐
‐‐
‐‐
V
V
V
V
IC = 10µA, IE = 0
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
IC = 1µA, VCE = 5V
IC = 10µA, VCE = 5V
IC = 500µA, VCE = 5V
IC = 1mA, IB = 0.1mA
IC = 0, VEB = 3V
IE = 0, VCB = 10V
IE = 0, VEB = 1V
VCC = 0V
VCC = ±80V
hFE
DC Current Gain
VCE(SAT)
IEBO
ICBO
COBO
CC1C2
IC1C2
fT
Collector Saturation Voltage
Emitter Cutoff Current
Collector Cutoff Current
V
pA
pA
pF
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
‐‐
‐‐
100
‐‐
pF
nA
MHz
dB
IC = 200µA, VCE = 5V
IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ,
f = 1KHz
NF
3
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
SOT-23 (Top View)
Available Packages:
LS301 in SOT-23
LS301 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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