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LS303(TO-78)

更新时间: 2024-09-23 14:52:43
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Transistor

LS303(TO-78) 数据手册

  
LS303  
MONOLITHIC DUAL  
NPN TRANSISTOR  
Linear Systems High Voltage Super-Beta Monolithic Dual NPN  
FEATURES  
HIGH GAIN  
The LS303 is a monolithic pair of high voltage Super-  
hFE 2000 @ 1µA TYP.  
COBO 2.0pF  
|VBE1 – VBE2 |= 0.2mV TYP.  
100MHz  
Beta NPN transistors mounted in a single TO-78  
package. The monolithic dual chip design reduces  
parasitics and gives better performance while ensuring  
extremely tight matching.  
LOW OUTPUT CAPACITANCE  
TIGHT VBE MATCHING  
HIGH ft  
ABSOLUTE MAXIMUM RATINGS 1  
@ 25°C (unless otherwise noted)  
The hermetically sealed TO-78 is well suited for hi-rel  
and harsh environment applications.  
Maximum Temperatures  
Storage Temperature  
(See Packaging Information).  
65°C to +200°C  
55°C to +150°C  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation (One side)  
Continuous Power Dissipation (Both sides)  
Linear Derating factor (One side)  
Linear Derating factor (Both sides)  
Maximum Currents  
LS303 Features:  
250mW  
500mW  
2.3mW/°C  
4.3mW/°C  
ƒ
ƒ
ƒ
Very high gain  
Tight matching  
Low Output Capacitance  
Collector Current  
5mA  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  
SYMBOL  
|VBE1 – VBE2  
|(VBE1 – VBE2)| / T  
CHARACTERISTIC  
MIN  
‐‐  
‐‐  
TYP  
0.2  
1
MAX  
1
5
UNITS  
mV  
µV/°C  
CONDITIONS  
|
Base Emitter Voltage Differential  
Base Emitter Voltage Differential  
Change with Temperature  
Base Current Differential  
IC = 10µA, VCE = 5V  
IC = 10µA, VCE = 5V  
TA = 55°C to +125°C  
IC = 10µA, VCE = 5V  
|IB1 IB2  
|
‐‐  
‐‐  
0.5  
5
1.5  
nA  
%
hFE1 /hFE2  
DC Current Gain Differential  
‐‐  
IC = 10µA, VCE = 5V  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
BVCCO  
CHARACTERISTICS  
MIN.  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
2000  
‐‐  
2000  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
MAX.  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
0.5  
0.2  
100  
2
2
0.5  
‐‐  
UNITS  
CONDITIONS  
Click To Buy  
Collector to Base Voltage  
Collector to Emitter Voltage  
EmitterBase Breakdown Voltage  
Collector to Collector Voltage  
10  
10  
6.2  
100  
‐‐  
2000  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
V
V
V
V
IC = 10µA, IE = 0  
IC = 10µA, IB = 0  
IE = 10µA, IC = 02  
IC = 10µA, IE = 0  
IC = 1µA, VCE = 5V  
IC = 10µA, VCE = 5V  
IC = 500µA, VCE = 5V  
IC = 1mA, IB = 0.1mA  
IC = 0, VEB = 3V  
hFE  
DC Current Gain  
VCE(SAT)  
IEBO  
ICBO  
COBO  
CC1C2  
IC1C2  
fT  
Collector Saturation Voltage  
Emitter Cutoff Current  
Collector Cutoff Current  
V
pA  
pA  
pF  
IE = 0, VCB = 5V  
IE = 0, VEB = 1V  
VCC = 0V  
VCC = ±20V  
Output Capacitance  
Collector to Collector Capacitance  
Collector to Collector Leakage Current  
Current Gain Bandwidth Product  
Narrow Band Noise Figure  
‐‐  
‐‐  
100  
‐‐  
pF  
nA  
MHz  
dB  
IC = 200µA, VCE = 5V  
IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ,  
f = 1KHz  
NF  
3
Notes:  
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired  
2. The reverse basetoemitter voltage must never exceed 6.2 volts; the reverse basetoemitter current must never exceed 10µA.  
TO-78 (Bottom View)  
Available Packages:  
LS303 in TO-78  
LS303 available as bare die  
Please contact Micross for full package and die dimensions:  
Email: chipcomponents@micross.com  
Web: www.micross.com/distribution.aspx  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  

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