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LS302_PDIP

更新时间： 2024-01-14 09:28:45
品牌 Logo 应用领域
MICROSS 晶体晶体管
页数 文件大小 规格书
1页 271K
描述
MONOLITHIC DUAL NPN TRANSISTOR

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LS302_PDIP 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Contact Manufacturer零件包装代码：SOIC
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.26
最大集电极电流 (IC)：0.005 A集电极-发射极最大电压：35 V
配置：SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE)：1000
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管元件材料：SILICON
标称过渡频率 (fT)：100 MHzBase Number Matches：1

LS302_PDIP 数据手册

  
LS302  
MONOLITHIC DUAL  
NPN TRANSISTOR  
Linear Systems High Voltage Super-Beta Monolithic Dual NPN  
FEATURES  
HIGH GAIN  
The LS302 is a monolithic pair of high voltage Super-  
hFE ≥ 1000 @ 1µA TYP.  
COBO ≤ 2.0pF  
|VBE1 – VBE2 |= 0.2mV TYP.  
100MHz  
Beta NPN transistors mounted in a single P-DIP  
package. The monolithic dual chip design reduces  
parasitics and gives better performance while ensuring  
extremely tight matching.  
LOW OUTPUT CAPACITANCE  
TIGHT VBE MATCHING  
HIGH ft  
ABSOLUTE MAXIMUM RATINGS 1  
@ 25°C (unless otherwise noted)  
The 8 Pin P-DIP provides ease of manufacturing, and  
the symmetrical pinout prevents improper orientation.  
Maximum Temperatures  
Storage Temperature  
(See Packaging Information).  
‐65°C to +200°C  
‐55°C to +150°C  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation (One side)  
Continuous Power Dissipation (Both sides)  
Linear Derating factor (One side)  
Linear Derating factor (Both sides)  
Maximum Currents  
LS302 Features:  
250mW  
500mW  
2.3mW/°C  
4.3mW/°C  
ƒ
ƒ
ƒ
Very high gain  
Tight matching  
Low Output Capacitance  
Collector Current  
5mA  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  
SYMBOL  
|VBE1 – VBE2  
∆|(VBE1 – VBE2)| / ∆T  
CHARACTERISTIC  
MIN  
‐‐  
‐‐  
TYP  
0.2  
1
MAX  
1
5
UNITS  
mV  
µV/°C  
CONDITIONS  
|
Base Emitter Voltage Differential  
Base Emitter Voltage Differential  
Change with Temperature  
Base Current Differential  
IC = 10µA, VCE = 5V  
IC = 10µA, VCE = 5V  
TA = ‐55°C to +125°C  
IC = 10µA, VCE = 5V  
|IB1 – IB2  
|
‐‐  
‐‐  
1
5
5
nA  
%
hFE1 /hFE2  
DC Current Gain Differential  
‐‐  
IC = 10µA, VCE = 5V  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
BVCCO  
CHARACTERISTICS  
MIN.  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
1000  
‐‐  
1000  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
MAX.  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
0.5  
0.2  
100  
2
2
0.5  
‐‐  
UNITS  
CONDITIONS  
Click To Buy  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter‐Base Breakdown Voltage  
Collector to Collector Voltage  
35  
35  
6.2  
100  
‐‐  
1000  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
V
V
V
V
IC = 10µA, IE = 0  
IC = 10µA, IB = 0  
IE = 10µA, IC = 02  
IC = 10µA, IE = 0  
IC = 1µA, VCE = 5V  
IC = 10µA, VCE = 5V  
IC = 500µA, VCE = 5V  
IC = 1mA, IB = 0.1mA  
IC = 0, VEB = 3V  
IE = 0, VCB = 10V  
IE = 0, VCB = 1V  
VCC = 0V  
VCC = ±80V  
hFE  
DC Current Gain  
VCE(SAT)  
IEBO  
ICBO  
COBO  
CC1C2  
IC1C2  
fT  
Collector Saturation Voltage  
Emitter Cutoff Current  
Collector Cutoff Current  
V
pA  
pA  
pF  
Output Capacitance  
Collector to Collector Capacitance  
Collector to Collector Leakage Current  
Current Gain Bandwidth Product  
Narrow Band Noise Figure  
‐‐  
‐‐  
100  
‐‐  
pF  
nA  
MHz  
dB  
IC = 200µA, VCE = 5V  
IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ,  
f = 1KHz  
NF  
3
Notes:  
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired  
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.  
P-DIP (Top View)  
Available Packages:  
LS302 in P-DIP  
LS302 available as bare die  
Please contact Micross for full package and die dimensions:  
Email: chipcomponents@micross.com  
Web: www.micross.com/distribution.aspx  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
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