LS103A-TP

更新时间： 2024-11-12 13:09:31

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美微科 - MCC		整流二极管肖特基二极管
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4页	230K
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中文翻译

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数据手册

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LS103A-TP 数据手册

M C C

LS103A

LS103B

LS103C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates

Compliant. See ordering information)

350mA Schottky

Barrier Diode

20~40Volt

xꢀ Small surface mounting type(Quadro Melf)

xꢀ High reliability

xꢀ Low reverse curent and low forward voltage

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Applications

Quadro MELF

xꢀ Low current rectification and high speed switching

Cathode Mark

Maximum Ratings*

Parameter

Symbol

Value

Units

Repetitive peak reverse voltage

LS103A

LS103B

LS103C

V_R

Power Dissipation at

^OC

Forward current

P_D

400

350

T_{amb 25}

I_FM

I_FRM

DIMENSIONS

Repetitive peak forward current

t_pİꢀ s

INCHES

MIN

1.70

DIM

MAX

.146

.016

.063

MIN

3.30

.20

MAX

3.70

.40

NOTE

.130

.008

.055

Storage Temperature Range

T_STG

R_thJA

-65 to 175

1.40

1.60

∅

Thermal Resistance( Junction

to Ambient)

.067

300

K/W

SUGGESTED SOLDER

PAD LAYOUT

Electrical Characteristics @ 25qC Unless Otherwise Specified

Symbol

Maximum

Unit

.155”

Forward Voltage

I_F=20mA

V_F

0.37

0.60

I_F=200mA

.065”

Reverse current

V_R=30V

I_R

LS103A

LS103B

LS103C

V_R=20V

V_R=10V

.022”

Diode capacitance

V_R=V_F=0,f=1MHz

C_D

Reverse recovery time

t_rr

I^F=I_R=20mA to 0.1I_R

Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.

www.mccsemi.com

1 of 4

Revision: A

2011/01/01

12 3 4

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