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LQA60A300C PDF预览

LQA60A300C

更新时间: 2024-11-14 11:40:35
品牌 Logo 应用领域
帕沃英蒂格盛 - POWERINT 二极管
页数 文件大小 规格书
8页 132K
描述
300 V, 60 A Q-Series Common-Cathode Diode

LQA60A300C 数据手册

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LQA60A300C  
QspeedFamily  
300 V, 60 A Q-Series Common-Cathode Diode  
Product Summary  
General Description  
This device has the lowest QRR of any 300V  
IF(AVG) per diode  
30  
300  
53  
A
V
VRRM  
Silicon diode.  
Its recovery characteristics  
QRR (Typ at 125 °C)  
IRRM (Typ at 125 °C)  
Softness tb/ta (Typ at 125 °C)  
nC  
A
increase efficiency, reduce EMI and eliminate  
snubbers.  
2.85  
0.6  
Applications  
AC/DC and DC/DC output rectification  
Output & freewheeling diodes  
Motor drive circuits  
Pin Assignment  
DC-AC inverters  
Features  
A1  
K
A2  
K
Low QRR, Low IRRM, Low tRR  
High dIF/dt capable (1000A/µs)  
Soft recovery  
(Backside  
Heatsink)  
TO-247 AD  
Benefits  
Increases efficiency  
Eliminates need for snubber circuits  
Reduces EMI filter component size & count  
Enables extremely fast switching  
A1  
K
A2  
RoHS Compliant  
Package uses Lead-free plating and Green mold  
compound.Halogen free per IEC 61249-2-21.  
Absolute Maximum Ratings  
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation  
under these conditions is not implied.  
Symbol Parameter  
Conditions  
Rating  
300  
30  
Units  
VRRM  
Peak repetitive reverse voltage  
V
A
A
A
IF(AVG)  
Average forward current  
Per Diode, TJ = 150 °C, TC = 99 °C  
Per Device, TJ = 150 °C, TC = 99 °C  
Per Diode, 60 Hz, ½ cycle  
60  
IFSM  
IFSM  
Non-repetitive peak surge current  
Non-repetitive peak surge current  
200  
Per Diode, ½ cycle of t = 28 µs Sinusoid,  
TC = 25 °C  
350  
A
TJ  
Maximum junction temperature  
Storage temperature  
150  
–55 to 150  
300  
°C  
°C  
°C  
W
TSTG  
Lead soldering temperature  
Power dissipation  
Leads at 1.6mm from case, 10 sec  
TC = 25 °C  
PD  
113  
Thermal Resistance  
Symbol Resistance from:  
Conditions  
Rating  
Units  
Junction to ambient  
Per Device  
Per Diode  
Per Device  
40 (Typ)  
1.1  
°C/W  
°C/W  
°C/W  
Rθ  
JA  
JC  
Junction to case  
Rθ  
0.6  
www.powerint.com  
January 2011  

LQA60A300C 替代型号

型号 品牌 替代类型 描述 数据表
LQA30A300C POWERINT

类似代替

300 V, 30 A Q-Series Common-Cathode Diode
DSEE30-12A IXYS

功能相似

HiPerFRED Epitaxial Diode

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