Datasheet > LPT16ED

LPT16ED

更新时间： 2024-10-18 23:15:15

品牌	Logo	应用领域
SIGE		晶体晶体管
页数	文件大小	规格书
5页	317K
描述
30 GHz SiGe Bipolar Transistor Final

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中文翻译

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技术参数
数据手册

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LPT16ED 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

LPT16ED 数据手册

LPT16ED

30 GHz SiGe Bipolar Transistor

Final

Applications

Product Description

The LPT16ED is a silicon germanium low phase

noise, high frequency NPN transistor for oscillator

applications up to 16GHz.

ꢀ

Low phase noise oscillators up to 16 GHz

VCO’s, DRO’s and YIG oscillators

Point-to-point radios

Satellite communications

Fiber optics, OC-192 and OC-768

Local Multipoint Distribution Systems, LMDS

The transistor exhibits low 1/f noise and provides

+13 dBm typical output power at V_CEof 3V and I_C

equal to 20 mA. It is easily operated from a single

supply voltage with appropriate external passive

components.

Features

The silicon germanium technology used in this device

provides outstanding high-frequency performance

combined with high thermal conductivity and superior

reliability under harsh operating and storage

conditions.

ꢀ

Low 1/f noise: -142 dBc/Hz at 100 Hz offset

Phase noise: -167 dBc/Hz at 100 kHz offset

Output power up to +13 dBm

Operation down to 1 volt, 2 mA

Gold bump pads for wire bond or flip chip (for

A complete mechanical description of the transistor is

available under SiGe Semiconductor Document

07MS001.

direct die attachment)

Ordering Information

Type

LPT16ED

Package

Bare Die

Remark

Shipped in

Waffle Pack

Functional Block Diagram

38-DST-01 ꢀRev 2.3 ꢀSept 5/02

1 of 5

12 3 4 5

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