Datasheet > LMUN5214T3G

LMUN5214T3G

更新时间： 2022-05-14 22:14:48

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
10页	772K
描述
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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LMUN5214T3G 数据手册

Series

LMUN5211T1G

TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5211T1G

1000

I /I = 10

C B

= 10 V

T Ă=Ă-25°C

25°C

T Ă=Ă75°C

25°C

-25°C

0.1

75°C

100

0.01

0.001

100

I , COLLECTOR CURRENT (mT)

Figure 2. V_CE(sat)versus I_C

Figure 3. DC Current Gain

100

25°C

75°C

f = 1 MHz

I = 0 V

T Ă=Ă-25°C

T = 25°C

0.1

0.01

0.001

V = 5 V

V , REVERSE BITS VOLTTGE (VOLTS)

V , INPUT VOLTTGE (VOLTS)

Figure 4. Output Capacitance

Figure 5. Output Current versus Input Voltage

= 0.2 V

T Ă=Ă-25°C

25°C

75°C

0.1

I , COLLECTOR CURRENT (mT)

Figure 6. Input Voltage versus Output Current

5/10

Rev :01.06.2018

www.leiditech.com

1 2 3 456 7 8...10

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