Datasheet > LMUN5231T1G

LMUN5231T1G

更新时间： 2024-02-24 23:30:24

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		晶体管
页数	文件大小	规格书
10页	925K
描述
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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LMUN5231T1G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	8
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.31 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

LMUN5231T1G 数据手册

LMUN5211T1GSeries

S-LMUN5211T1G

Series

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network con-

sisting of two resistors; a series base resistor and a base–emitter resistor.

The BRT eliminates these individual components by integrating them into a

single device. The use of a BRT can reduce both system cost and board

space. The device is housed in the SC–70/SOT–323 package which is

designed for low power surface mount applications.

SC-70 / SOT-323

PIN 3

COLLECTOR

(OUTPUT)

R₁

R₂

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

• Simplifies Circuit Design

MARKINGDIAGRAM

• Reduces Board Space

• Reduces Component Count

• The SC–70/SOT–323 package can be soldered using wave or

reflow. The modified gull–winged leads absorb thermal stress

during soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel

8x = Specific Device Code

x = (See Marking Table)

M= Date Code

Use the Device Number to order the 7 inch/3000 unit reel.

• Pb-Free package is available

•S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table on page 2

of this data sheet.

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

V_CBO

V_CEO

I_C

Value

Unit

Vdc

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

P_D

202 (Note 1.)

310 (Note 2.)

1.6 (Note 1.)

2.5 (Note 2.)

T = 25°C

Derate above 25°C

mW/°C

°C/W

°C

Thermal Resistance –

Junction-to-Ambient

R_θJA

R_θJL

618 (Note 1.)

403 (Note 2.)

Thermal Resistance –

Junction-to-Lead

280 (Note 1.)

332 (Note 2.)

Junction and Storage

Temperature Range

T_J,T_stg

–55 to +150

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

1/10

Rev :01.06.2017

www.leiditech.com

12 3 4 5 6 7...10

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