LMH6702QML
www.ti.com
SNOSAQ2E –JULY 2005–REVISED MARCH 2013
1.7 GHz, Ultra Low Distortion, Wideband Op Amp
Check for Samples: LMH6702QML
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FEATURES
DESCRIPTION
The LMH6702 is a very wideband, DC coupled
monolithic operational amplifier designed specifically
for wide dynamic range systems requiring exceptional
signal fidelity. Benefitting from TI's current feedback
architecture, the LMH6702 offers unity gain stability at
exceptional speed without need for external
compensation.
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VS = ±5V, TA = 25°C, AV = +2V/V, RL = 100Ω,
VOUT = 2VPP, Typical Unless Noted:
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Available with Radiation Ensurance
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High Dose Rate 300 krad(Si)
ELDRS Free 300 krad(Si)
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−3dB Bandwidth (VOUT = 0.2 VPP) 720 MHz
Low Noise 1.83nV/√Hz
With its 720MHz bandwidth (AV = 2V/V, VO = 2VPP),
10-bit distortion levels through 60MHz (RL = 100Ω),
1.83nV/√Hz input referred noise and 12.5mA supply
current, the LMH6702 is the ideal driver or buffer for
high-speed flash A/D and D/A converters.
Fast Settling to 0.1% 13.4ns
Fast Slew Rate 3100V/μs
Supply Current 12.5mA
Wide dynamic range systems such as radar and
Output Current 80mA
communication receivers, requiring
a
wideband
Low Intermodulation Distortion (75MHz)
−67dBc
amplifier offering exceptional signal purity, will find the
LMH6702's low input referred noise and low harmonic
and intermodulation distortion make it an attractive
high speed solution.
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Improved Replacement for CLC409 and
CLC449
The LMH6702 is constructed using TI's VIP10
complimentary bipolar process and TI's proven
current feedback architecture.
APPLICATIONS
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Flash A/D Driver
D/A transimpedance Buffer
Wide Dynamic Range IF Amp
Radar/Communication Receivers
Line Driver
High Resolution Video
Connection Diagrams
8
7
6
5
N/C
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2
3
4
N/C
+V
N/C
1
2
3
4
5
10
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N/C
+V
V
V
CC
INV
CC
INV
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V
V
OUT
V
V
OUT
NON-INV
NON-INV
N/C
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N/C
N/C
-V
-V
CC
CC
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N/C
Figure 1. 8-Lead CDIP (NAB)
Top View
Figure 2. 10-Lead CLGA (NAC)
Top View
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2013, Texas Instruments Incorporated