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LMC6032IM/NOPB PDF预览

LMC6032IM/NOPB

更新时间: 2024-01-15 09:40:38
品牌 Logo 应用领域
美国国家半导体 - NSC 放大器光电二极管
页数 文件大小 规格书
14页 357K
描述
IC DUAL OP-AMP, 9000 uV OFFSET-MAX, 1.4 MHz BAND WIDTH, PDSO8, SO-8, Operational Amplifier

LMC6032IM/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:0.92放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):4e-7 µA
25C 时的最大偏置电流 (IIB):0.0002 µA最小共模抑制比:63 dB
标称共模抑制比:83 dB频率补偿:YES
最大输入失调电流 (IIO):0.0001 µA最大输入失调电压:9000 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm低-偏置:YES
低-失调:NO微功率:YES
湿度敏感等级:1负供电电压上限:
标称负供电电压 (Vsup):功能数量:2
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TUBE峰值回流温度(摄氏度):260
功率:NO电源:5/15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:0.4 V/us
标称压摆率:1.1 V/us子类别:Operational Amplifier
最大压摆率:1.6 mA供电电压上限:16 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:1400 kHz
最小电压增益:20000宽带:NO
宽度:3.91 mmBase Number Matches:1

LMC6032IM/NOPB 数据手册

 浏览型号LMC6032IM/NOPB的Datasheet PDF文件第2页浏览型号LMC6032IM/NOPB的Datasheet PDF文件第3页浏览型号LMC6032IM/NOPB的Datasheet PDF文件第4页浏览型号LMC6032IM/NOPB的Datasheet PDF文件第5页浏览型号LMC6032IM/NOPB的Datasheet PDF文件第6页浏览型号LMC6032IM/NOPB的Datasheet PDF文件第7页 
August 2000  
LMC6032  
CMOS Dual Operational Amplifier  
n Low offset voltage drift: 2.3 µV/˚C  
General Description  
n Ultra low input bias current: 40 fA  
n Input common-mode range includes V−  
n Operating range from +5V to +15V supply  
n ISS = 400 µA/amplifier; independent of V+  
n Low distortion: 0.01% at 10 kHz  
n Slew rate: 1.1 V/µs  
The LMC6032 is a CMOS dual operational amplifier which  
can operate from either a single supply or dual supplies. Its  
performance features include an input common-mode range  
that reaches ground, low input bias current, and high voltage  
gain into realistic loads, such as 2 kand 600.  
This chip is built with National’s advanced Double-Poly  
Silicon-Gate CMOS process.  
n Improved performance over TLC272  
See the LMC6034 datasheet for a CMOS quad operational  
amplifier with these same features. For higher performance  
characteristics refer to the LMC662.  
Applications  
n High-impedance buffer or preamplifier  
n Current-to-voltage converter  
n Long-term integrator  
Features  
n Specified for 2 kand 600loads  
n High voltage gain: 126 dB  
n Sample-and-hold circuit  
n Medical instrumentation  
Connection Diagram  
8-Pin DIP/SO  
01113501  
Top View  
10 Hz High-Pass Filter  
01113520  
© 2004 National Semiconductor Corporation  
DS011135  
www.national.com  

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