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LMC6032IMX/NOPB PDF预览

LMC6032IMX/NOPB

更新时间: 2024-11-23 13:09:23
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器
页数 文件大小 规格书
13页 294K
描述
IC DUAL OP-AMP, 9000 uV OFFSET-MAX, 1.4 MHz BAND WIDTH, PDSO8, SOIC-8, Operational Amplifier

LMC6032IMX/NOPB 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.17Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.0002 µA最小共模抑制比:60 dB
标称共模抑制比:83 dB频率补偿:YES
最大输入失调电压:9000 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
低-偏置:YES低-失调:NO
微功率:YES湿度敏感等级:1
负供电电压上限:标称负供电电压 (Vsup):
功能数量:2端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:5/15 V
认证状态:Not Qualified座面最大高度:1.75 mm
最小摆率:0.4 V/us标称压摆率:0.8 V/us
子类别:Operational Amplifier最大压摆率:1.9 mA
供电电压上限:16 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
标称均一增益带宽:1400 kHz最小电压增益:20000
宽度:3.9 mmBase Number Matches:1

LMC6032IMX/NOPB 数据手册

 浏览型号LMC6032IMX/NOPB的Datasheet PDF文件第2页浏览型号LMC6032IMX/NOPB的Datasheet PDF文件第3页浏览型号LMC6032IMX/NOPB的Datasheet PDF文件第4页浏览型号LMC6032IMX/NOPB的Datasheet PDF文件第5页浏览型号LMC6032IMX/NOPB的Datasheet PDF文件第6页浏览型号LMC6032IMX/NOPB的Datasheet PDF文件第7页 
November 1994  
LMC6032  
CMOS Dual Operational Amplifier  
n Low offset voltage drift: 2.3 µV/˚C  
n Ultra low input bias current: 40 fA  
n Input common-mode range includes V−  
General Description  
The LMC6032 is a CMOS dual operational amplifier which  
can operate from either a single supply or dual supplies. Its  
performance features include an input common-mode range  
that reaches ground, low input bias current, and high voltage  
gain into realistic loads, such as 2 kand 600.  
n Operating range from +5V to +15V supply  
+
=
n ISS 400 µA/amplifier; independent of V  
n Low distortion: 0.01% at 10 kHz  
n Slew rate: 1.1 V/µs  
n Improved performance over TLC272  
This chip is built with National’s advanced Double-Poly  
Silicon-Gate CMOS process.  
See the LMC6034 datasheet for a CMOS quad operational  
amplifier with these same features. For higher performance  
characteristics refer to the LMC662.  
Applications  
n High-impedance buffer or preamplifier  
n Current-to-voltage converter  
n Long-term integrator  
Features  
n Specified for 2 kand 600loads  
n High voltage gain: 126 dB  
n Sample-and-hold circuit  
n Medical instrumentation  
Connection Diagram  
8-Pin DIP/SO  
DS011135-1  
Top View  
Ordering Information  
Temperature Range  
Package  
NSC Drawing  
Transport Media  
Industrial  
−40˚C TJ +85˚C  
LMC6032IN  
8-Pin  
Molded DIP  
8-Pin  
N08E  
M08A  
Rail  
LMC6032IM  
Rail  
Small Outline  
Tape and Reel  
© 1999 National Semiconductor Corporation  
DS011135  
www.national.com  

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