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LM5101ASDX-1/NOPB

更新时间： 2024-11-16 12:09:47
品牌 Logo 应用领域
德州仪器 - TI 驱动器MOSFET驱动器栅极驱动程序和接口接口集成电路光电二极管栅极驱动
页数 文件大小 规格书
28页 1319K
描述
3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers

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LM5101ASDX-1/NOPB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：HVSON, SOLCC8,.16,32
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：5.52高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：S-PDSO-N8
JESD-609代码：e3长度：4 mm
湿度敏感等级：1功能数量：1
端子数量：8最大输出电流：3 A
标称输出峰值电流：3 A输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：HVSON
封装等效代码：SOLCC8,.16,32封装形状：SQUARE
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：12 V认证状态：Not Qualified
座面最大高度：0.8 mm子类别：MOSFET Drivers
最大压摆率：3 mA最大供电电压：14 V
最小供电电压：9 V标称供电电压：12 V
表面贴装：YES温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn)端子形式：NO LEAD
端子节距：0.8 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：0.056 µs
接通时间：0.056 µs宽度：4 mm
Base Number Matches：1

LM5101ASDX-1/NOPB 数据手册

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LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C  
www.ti.com  
SNOSAW2P –SEPTEMBER 2006–REVISED MARCH 2013  
LM5100A/B/C  
LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers  
Check for Samples: LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C  
1
FEATURES  
DESCRIPTION  
The LM5100A/B/C and LM5101A/B/C High Voltage  
Gate Drivers are designed to drive both the high-side  
2
•
Drives Both a High-side and Low-side N-  
Channel MOSFETs  
and the low-side N-Channel MOSFETs in  
a
•
•
•
•
Independent High and Low Driver Logic Inputs  
Bootstrap Supply Voltage up to 118V DC  
Fast Propagation Times (25 ns Typical)  
synchronous buck or a half-bridge configuration. The  
floating high-side driver is capable of operating with  
supply voltages up to 100V. The “A” versions provide  
a full 3A of gate drive while the “B” and “C” versions  
provide 2A and 1A respectively. The outputs are  
independently controlled with CMOS input thresholds  
Drives 1000 pF Load with 8 ns Rise and Fall  
Times  
•
Excellent Propagation Delay Matching (3 ns  
typical)  
(LM5100A/B/C)  
or  
TTL  
input  
thresholds  
(LM5101A/B/C). An integrated high voltage diode is  
provided to charge the high-side gate drive bootstrap  
capacitor. A robust level shifter operates at high  
speed while consuming low power and providing  
clean level transitions from the control logic to the  
high-side gate driver. Under-voltage lockout is  
provided on both the low-side and the high-side  
power rails. These devices are available in the  
standard SOIC-8 pin, SO PowerPad-8 pin and the  
WSON-10 pin packages. The LM5100C and  
LM5101C are also available in MSOP-PowerPad-8  
package. The LM5101A is also available in WSON-8  
pin package.  
•
•
•
Supply Rail Under-voltage Lockout  
Low Power Consumption  
Pin Compatible with HIP2100/HIP2101  
TYPICAL APPLICATIONS  
•
•
•
•
•
Current Fed Push-pull Converters  
Half and Full Bridge Power Converters  
Synchronous Buck Converters  
Two Switch Forward Power Converters  
Forward with Active Clamp Converters  
Package  
•
•
•
•
•
SOIC-8  
SO PowerPad-8  
WSON-8 (4 mm x 4 mm)  
WSON-10 (4 mm x 4 mm)  
MSOP-PowerPad-8  
Simplified Block Diagram  
HB  
HO  
UVLO  
DRIVER  
LEVEL  
SHIFT  
HS  
HI  
VDD  
UVLO  
LO  
LI  
DRIVER  
VSS  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2006–2013, Texas Instruments Incorporated  
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