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LM5101BSD PDF预览

LM5101BSD

更新时间: 2024-11-16 20:03:31
品牌 Logo 应用领域
美国国家半导体 - NSC 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
16页 348K
描述
IC 2 A HALF BRDG BASED MOSFET DRIVER, PDSO10, 4 X 4 MM, LLP-10, MOSFET Driver

LM5101BSD 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:4 X 4 MM, LLP-10Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.08高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:S-PDSO-N10
JESD-609代码:e0长度:4 mm
湿度敏感等级:1功能数量:1
端子数量:10最高工作温度:125 °C
最低工作温度:-40 °C标称输出峰值电流:2 A
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC10,.16,32封装形状:SQUARE
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
电源:12 V认证状态:Not Qualified
座面最大高度:0.8 mm子类别:MOSFET Drivers
最大供电电压:14 V最小供电电压:9 V
标称供电电压:12 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
断开时间:0.056 µs接通时间:0.056 µs
宽度:4 mmBase Number Matches:1

LM5101BSD 数据手册

 浏览型号LM5101BSD的Datasheet PDF文件第2页浏览型号LM5101BSD的Datasheet PDF文件第3页浏览型号LM5101BSD的Datasheet PDF文件第4页浏览型号LM5101BSD的Datasheet PDF文件第5页浏览型号LM5101BSD的Datasheet PDF文件第6页浏览型号LM5101BSD的Datasheet PDF文件第7页 
June 9, 2009  
LM5100A/B/C  
LM5101A/B/C  
3A, 2A and 1A High Voltage High-Side and Low-Side Gate  
Drivers  
General Description  
Features  
The LM5100A/B/C and LM5101A/B/C High Voltage Gate  
Drivers are designed to drive both the high-side and the low-  
side N-Channel MOSFETs in a synchronous buck or a half-  
bridge configuration. The floating high-side driver is capable  
of operating with supply voltages up to 100V. The “A” versions  
provide a full 3A of gate drive while the “B” and “C” versions  
provide 2A and 1A respectively. The outputs are indepen-  
dently controlled with CMOS input thresholds (LM5100A/B/C)  
or TTL input thresholds (LM5101A/B/C). An integrated high  
voltage diode is provided to charge the high-side gate drive  
bootstrap capacitor. A robust level shifter operates at high  
speed while consuming low power and providing clean level  
transitions from the control logic to the high-side gate driver.  
Under-voltage lockout is provided on both the low-side and  
the high-side power rails. These devices are available in the  
standard SOIC-8 pin, PSOP-8 pin and the LLP-10 pin pack-  
ages. The LM5100C and LM5101C are also available in  
eMSOP-8 package.  
Drives both a high-side and low-side N-Channel  
MOSFETs  
Independent high and low driver logic inputs  
Bootstrap supply voltage up to 118V DC  
Fast propagation times (25 ns typical)  
Drives 1000 pF load with 8 ns rise and fall times  
Excellent propagation delay matching (3 ns typical)  
Supply rail under-voltage lockout  
Low power consumption  
Pin compatible with HIP2100/HIP2101  
Typical Applications  
Current Fed push-pull converters  
Half and Full Bridge power converters  
Synchronous buck converters  
Two switch forward power converters  
Forward with Active Clamp converters  
Package  
SOIC-8  
PSOP-8  
LLP-10 (4 mm x 4 mm)  
eMSOP-8 (LM5100/01C)  
Simplified Block Diagram  
20203103  
FIGURE 1.  
© 2009 National Semiconductor Corporation  
202031  
www.national.com  

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