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LM5026SDX/NOPB PDF预览

LM5026SDX/NOPB

更新时间: 2024-11-27 11:12:55
品牌 Logo 应用领域
德州仪器 - TI 控制器开关光电二极管
页数 文件大小 规格书
41页 1807K
描述
具有 P 或 N 沟道钳位 FET 和 CS 重启计时器的 100V 有源钳位电流模式 PWM 控制器 | NHQ | 16

LM5026SDX/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SON
包装说明:HVSON, SOLCC16,.2,20针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:1.53模拟集成电路 - 其他类型:SWITCHING CONTROLLER
控制模式:CURRENT-MODE控制技术:PULSE WIDTH MODULATION
最大输入电压:100 V最小输入电压:13 V
标称输入电压:48 VJESD-30 代码:S-PDSO-N16
JESD-609代码:e3长度:5 mm
湿度敏感等级:1功能数量:1
端子数量:16最高工作温度:125 °C
最低工作温度:-40 °C标称输出电压:7.6 V
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC16,.2,20封装形状:SQUARE
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:0.8 mm
子类别:Switching Regulator or Controllers表面贴装:YES
切换器配置:SINGLE最大切换频率:660 kHz
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5 mmBase Number Matches:1

LM5026SDX/NOPB 数据手册

 浏览型号LM5026SDX/NOPB的Datasheet PDF文件第2页浏览型号LM5026SDX/NOPB的Datasheet PDF文件第3页浏览型号LM5026SDX/NOPB的Datasheet PDF文件第4页浏览型号LM5026SDX/NOPB的Datasheet PDF文件第5页浏览型号LM5026SDX/NOPB的Datasheet PDF文件第6页浏览型号LM5026SDX/NOPB的Datasheet PDF文件第7页 
Sample &  
Buy  
Support &  
Community  
Reference  
Design  
Product  
Folder  
Tools &  
Software  
Technical  
Documents  
LM5026  
SNVS363E AUGUST 2005REVISED NOVEMBER 2015  
LM5026 Active Clamp Current Mode PWM Controller  
1 Features  
3 Description  
The LM5026 PWM controller contains all of the  
1
Current-Mode Control  
features necessary to implement power converters  
utilizing the active clamp and reset technique with  
current-mode control. With the active clamp  
technique, higher efficiencies and greater power  
densities can be realized compared to conventional  
catch winding or RDC clamp and reset techniques.  
Two control outputs are provided, the main power  
switch control (OUT_A) and the active clamp switch  
control (OUT_B). The device can be configured to  
control either a P-Channel or N-Channel clamp  
switch. The main gate driver features a compound  
configuration, consisting of both MOS and Bipolar  
devices, providing superior gate drive characteristics.  
The LM5026 can be configured to operate with bias  
voltages over a wide input range of 8 V to 100 V.  
Additional features include programmable maximum  
duty cycle, line undervoltage lockout, cycle-by-cycle  
current limit, hiccup mode fault operation with  
adjustable timeout delay, PWM slope compensation,  
Internal 100-V Start-Up Bias Regulator  
3-A Compound Main Gate Driver  
High Bandwidth Optocoupler Interface  
Programmable Line Undervoltage Lockout (UVLO)  
With Adjustable Hysteresis  
Versatile Dual Mode Overcurrent Protection With  
Hiccup Delay Timer  
Programmable Overlap or Deadtime between the  
Main and Active Clamp Outputs  
Programmable Maximum Duty Cycle Clamp  
Programmable Soft-Start  
Leading Edge Blanking  
Resistor Programmed 1-MHz Capable Oscillator  
Oscillator Sync I/O Capability  
Precision 5-V Reference  
soft-start,  
1-MHz  
capable  
oscillator  
with  
synchronization input and output capability, precision  
reference, and thermal shutdown.  
2 Applications  
Server Power Supplies  
Device Information(1)  
48-V Telecom Power Supplies  
High Efficiency DC–DC Power Supplies  
PART NUMBER  
LM5026  
PACKAGE  
WSON (16)  
TSSOP (16)  
BODY SIZE (NOM)  
5.00 mm × 5.00 mm  
4.40 mm × 5.00 mm  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
Typical Application Circuit  
V
IN  
36 - 78V  
V
OUT  
3.3V  
T1  
CS  
V
CC  
V
IN  
CS  
LM5026  
UVLO  
OUT_A  
OUT_B  
REF  
TIME  
RES  
RT  
ERROR  
AMP and  
ISOLATION  
COMP  
SYNC  
SS  
AGND  
DCL  
PGND  
SYNC I/O  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 

LM5026SDX/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LM5026SD/NOPB TI

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具有 P 或 N 沟道钳位 FET 和 CS 重启计时器的 100V 有源钳位电流模式 P

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