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LM4875MX/NOPB PDF预览

LM4875MX/NOPB

更新时间: 2024-01-16 07:23:43
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德州仪器 - TI 放大器光电二极管商用集成电路音频放大器
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26页 1724K
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具有精密直流音量控制和耳机放大器的 750mW、立体声、模拟输入、AB 类音频放大器 | D | 8 | -40 to 85

LM4875MX/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:0.67商用集成电路类型:VOLUME CONTROL CIRCUIT
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:1
信道数量:1功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C标称输出功率:1 W
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:Audio/Video Amplifiers
最大压摆率:7 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.7 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.91 mmBase Number Matches:1

LM4875MX/NOPB 数据手册

 浏览型号LM4875MX/NOPB的Datasheet PDF文件第6页浏览型号LM4875MX/NOPB的Datasheet PDF文件第7页浏览型号LM4875MX/NOPB的Datasheet PDF文件第8页浏览型号LM4875MX/NOPB的Datasheet PDF文件第10页浏览型号LM4875MX/NOPB的Datasheet PDF文件第11页浏览型号LM4875MX/NOPB的Datasheet PDF文件第12页 
LM4875  
www.ti.com  
SNAS042C JANUARY 2002REVISED MAY 2013  
APPLICATION INFORMATION  
BRIDGE CONFIGURATION EXPLANATION  
As shown in Figure 1, the LM4875 consists of two operational amplifiers internally. An external DC voltage sets  
the closed-loop gain of the first amplifier, whereas two internal 20kresistors set the second amplifier's gain at -  
1. The LM4875 can be used to drive a speaker connected between the two amplifier outputs or a monaural  
headphone connected between VO1 and GND.  
Figure 1 shows that the output of Amp1 serves as the input to Amp2. This results in both amplifiers producing  
signals that are identical in magnitude, but 180° out of phase.  
Taking advantage of this phase difference, a load placed between VO1 and VO2 is driven differentially (commonly  
referred to as “bridge mode“ ). This mode is different from single-ended driven loads that are connected between  
a single amplifier's output and ground.  
Bridge mode has a distinct advantage over the single-ended configuration: its differential drive to the load  
doubles the output swing for a specified supply voltage. This results in four times the output power when  
compared to a single-ended amplifier under the same conditions. This increase in attainable output assumes that  
the amplifier is not current limited or the output signal is not clipped.  
Another advantage of the differential bridge output is no net DC voltage across load. This results from biasing  
VO1 and VO2 at half-supply. This eliminates the coupling capacitor that single supply, single-ended amplifiers  
require. Eliminating an output coupling capacitor in a single-ended configuration forces a single supply amplifier's  
half-supply bias voltage across the load. The current flow created by the half-supply bias voltage increases  
internal IC power dissipation and may permanently damage loads such as speakers.  
POWER DISSIPATION  
Power dissipation is a major concern when designing a successful bridged or single-ended amplifier. Equation 1  
states the maximum power dissipation point for a single-ended amplifier operating at a given supply voltage and  
driving a specified output load.  
PDMAX = (VDD)2/(2π2RL) Single-Ended  
(1)  
However, a direct consequence of the increased power delivered to the load by a bridge amplifier is an increase  
in internal power dissipation point for a bridge amplifier operating at the same given conditions.  
PDMAX = 4*(VDD)2/(2π2RL) Bridge Mode  
(2)  
The LM4875 has two operational amplifiers in one package and the maximum internal power dissipation is 4  
times that of a single-ended amplifier. However, even with this substantial increase in power dissipation, the  
LM4875 does not require heatsinking. From Equation 2, assuming a 5V power supply and an 8load, the  
maximum power dissipation point is 633 mW. The maximum power dissipation point obtained from Equation 2  
must not be greater than the power dissipation that results from Equation 3:  
PDMAX = (TJMAX–TA)/θJA  
(3)  
For the SOIC package, θJA = 150°C/W. The VSSOP package has a 190°C/W θJA. TJMAX = 150°C for the  
LM4875. For a given ambient temperature TA, Equation 3 can be used to find the maximum internal power  
dissipation supported by the IC packaging. If the result of Equation 2 is greater than that of Equation 3, then  
either decrease the supply voltage, increase the load impedance, or reduce the ambient temperature. For a  
typical application using the SOIC packaged LM4875, a 5V power supply, and an 8load, the maximum ambient  
temperature that does not violate the maximum junction temperature is approximately 55°C. The maximum  
ambient temperature for the VSSOP package with the same conditions is approximately 30°C. These results  
further assume that a device is a surface mount part operating around the maximum power dissipation point.  
Since internal power dissipation is a function of output power, higher ambient temperatures are allowed as output  
power decreases. Refer to the TYPICAL PERFORMANCE CHARACTERISTICS curves for power dissipation  
information at lower output power levels.  
Copyright © 2002–2013, Texas Instruments Incorporated  
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LM4875MX/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LM4875M/NOPB TI

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具有精密直流音量控制和耳机放大器的 750mW、立体声、模拟输入、AB 类音频放大器 |

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