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LM4431M3-2.5 PDF预览

LM4431M3-2.5

更新时间： 2024-11-24 11:09:35
品牌 Logo 应用领域
德州仪器 - TI 光电二极管
页数 文件大小 规格书
16页 552K
描述
微功耗并联电压基准 | DBZ | 3 | 0 to 70

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LM4431M3-2.5 技术参数

生命周期：Not Recommended零件包装代码：SOT-23
包装说明：TSSOP, TO-236针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：1 week
风险等级：5.31Is Samacsys：N
模拟集成电路 - 其他类型：TWO TERMINAL VOLTAGE REFERENCEJESD-30 代码：R-PDSO-G3
JESD-609代码：e0长度：2.92 mm
湿度敏感等级：1功能数量：1
输出次数：1端子数量：3
最高工作温度：70 °C最低工作温度：
最大输出电压：2.55 V最小输出电压：2.45 V
标称输出电压：2.5 V封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TO-236
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1 mm子类别：Voltage References
表面贴装：YES技术：BIPOLAR
最大电压温度系数：30 ppm/ °C温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.96 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED微调/可调输出：NO
最大电压容差：2%宽度：1.3 mm
Base Number Matches：1

LM4431M3-2.5 数据手册

 浏览型号LM4431M3-2.5的Datasheet PDF文件第2页浏览型号LM4431M3-2.5的Datasheet PDF文件第3页浏览型号LM4431M3-2.5的Datasheet PDF文件第4页浏览型号LM4431M3-2.5的Datasheet PDF文件第5页浏览型号LM4431M3-2.5的Datasheet PDF文件第6页浏览型号LM4431M3-2.5的Datasheet PDF文件第7页 
LM4431  
www.ti.com  
SNVS103C –JUNE 2000–REVISED APRIL 2013  
LM4431 Micropower Shunt Voltage Reference  
Check for Samples: LM4431  
1
FEATURES  
DESCRIPTION  
Ideal for space critical applications, the LM4431  
voltage reference is available in the sub-miniature  
(3 mm x 1.3 mm) SOT-23 surface-mount package.  
The LM4431's advanced design eliminates the need  
for an external stabilizing capacitor while ensuring  
stability with any capacitive load, thus making the  
LM4431 easy to use. The operating current range is  
100 μA to 15 mA.  
2
•
•
•
•
Small Package: SOT-23  
No Output Capacitor Required  
Tolerates Capacitive Loads  
Fixed Reverse Breakdown Voltage of 2.50V  
APPLICATIONS  
•
•
•
•
•
•
•
Portable, Battery-Powered Equipment  
Data Acquisition Systems  
Instrumentation  
The LM4431 utilizes fuse and zener-zap reverse  
breakdown voltage trim during wafer sort to ensure  
that the parts have an accuracy of better than ±2.0%  
at 25°C. Bandgap reference temperature drift  
curvature correction and low dynamic impedance  
ensure stable reverse breakdown voltage accuracy  
over a wide range of operating temperatures and  
currents.  
Process Control  
Energy Management  
Product Testing  
Power Supplies  
KEY SPECIFICATIONS  
•
•
Output Voltage Tolerance: 25°C: ±2.0% (Max)  
Low Output Noise (10 Hz to 10 kHz): 35 μVrms  
(Typ)  
•
Wide Operating Current Range: 100 μA to 15  
mA  
•
•
Commercial Temperature Range: 0 to +70 °C  
Low Temperature Coefficient: 30 ppm/°C (Typ)  
Connection Diagram  
Top View  
* This pin must be left floating or connected to pin 2.  
Figure 1. SOT-23 Package  
See Package Number DBZ0003A  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2000–2013, Texas Instruments Incorporated  
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LM4431M3-2.5 替代型号

型号 品牌 替代类型 描述 数据表
LM4431M3X-2.5/NOPB TI

类似代替

 微功耗并联电压基准 | DBZ | 3 | 0 to 70
LM4431M3-2.5/NOPB TI

类似代替

 微功耗并联电压基准 | DBZ | 3 | 0 to 70

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LM4431M3-2.5/NOPB TI

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LM4431M3X-2.5 ETC

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 		微功耗并联电压基准 | DBZ | 3 | 0 to 70
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