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LM195H/883B PDF预览

LM195H/883B

更新时间： 2024-01-13 05:16:52
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 开关晶体管
页数 文件大小 规格书
13页 420K
描述
Power Bipolar Transistor, 42V V(BR)CEO, 3-Element, NPN and PNP, Silicon, Metal, 3 Pin, METAL CAN, H03B, 3 PIN

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中文翻译

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LM195H/883B 技术参数

生命周期：Contact Manufacturer包装说明：CYLINDRICAL, O-MBCY-W3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.66外壳连接：EMITTER
集电极-发射极最大电压：42 V配置：COMPLEX
JESD-30 代码：O-MBCY-W3元件数量：3
端子数量：3封装主体材料：METAL
封装形状：ROUND封装形式：CYLINDRICAL
极性/信道类型：NPN AND PNP参考标准：MIL-STD-883B
表面贴装：NO端子形式：WIRE
端子位置：BOTTOM晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

LM195H/883B 数据手册

 浏览型号LM195H/883B的Datasheet PDF文件第2页浏览型号LM195H/883B的Datasheet PDF文件第3页浏览型号LM195H/883B的Datasheet PDF文件第4页浏览型号LM195H/883B的Datasheet PDF文件第5页浏览型号LM195H/883B的Datasheet PDF文件第6页浏览型号LM195H/883B的Datasheet PDF文件第7页 
June 1999  
LM195/LM395  
Ultra Reliable Power Transistors  
ance, it is necessary to insert a 5.0k resistor in series with  
the base lead to prevent possible emitter follower oscilla-  
tions. Although the device is usually stable as an emitter fol-  
lower, the resistor eliminates the possibility of trouble without  
degrading performance. Finally, since it has good high fre-  
quency response, supply bypassing is recommended.  
General Description  
The LM195/LM395 are fast, monolithic power transistors  
with complete overload protection. These devices, which act  
as high gain power transistors, have included on the chip,  
current limiting, power limiting, and thermal overload protec-  
tion making them virtually impossible to destroy from any  
type of overload. In the standard TO-3 transistor power pack-  
age, the LM195 will deliver load currents in excess of 1.0A  
and can switch 40V in 500 ns.  
For low-power applications (under 100 mA), refer to the  
LP395 Ultra Reliable Power Transistor.  
The LM195/LM395 are available in standard TO-3 power  
packages and solid Kovar TO-5. The LM195 is rated for op-  
eration from −55˚C to +150˚C and the LM395 from 0˚C to  
+125˚C.  
The inclusion of thermal limiting, a feature not easily avail-  
able in discrete designs, provides virtually absolute protec-  
tion against overload. Excessive power dissipation or inad-  
equate heat sinking causes the thermal limiting circuitry to  
turn off the device preventing excessive heating.  
Features  
n Internal thermal limiting  
n Greater than 1.0A output current  
n 3.0 µA typical base current  
n 500 ns switching time  
The LM195 offers a significant increase in reliability as well  
as simplifying power circuitry. In some applications, where  
protection is unusually difficult, such as switching regulators,  
lamp or solenoid drivers where normal power dissipation is  
low, the LM195 is especially advantageous.  
n 2.0V saturation  
The LM195 is easy to use and only a few precautions need  
be observed. Excessive collector to emitter voltage can de-  
stroy the LM195 as with any power transistor. When the de-  
vice is used as an emitter follower with low source imped-  
n Base can be driven up to 40V without damage  
n Directly interfaces with CMOS or TTL  
n 100% electrical burn-in  
Simplified Circuit  
DS006009-1  
© 1999 National Semiconductor Corporation  
DS006009  
www.national.com  
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