Datasheet > LM195K/883

LM195K/883

更新时间： 2024-01-25 08:17:34

品牌	Logo	应用领域
美国国家半导体 - NSC		晶体晶体管
页数	文件大小	规格书
13页	424K
描述
Ultra Reliable Power Transistors

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

LM195K/883 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.87
JESD-609代码：	e0	端子数量：	3
封装主体材料：	METAL	认证状态：	Not Qualified
子类别：	Power Bipolar Transistors	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

LM195K/883 数据手册

June 1999

LM195/LM395

Ultra Reliable Power Transistors

ance, it is necessary to insert a 5.0k resistor in series with

the base lead to prevent possible emitter follower oscilla-

tions. Although the device is usually stable as an emitter fol-

lower, the resistor eliminates the possibility of trouble without

degrading performance. Finally, since it has good high fre-

quency response, supply bypassing is recommended.

General Description

The LM195/LM395 are fast, monolithic power transistors

with complete overload protection. These devices, which act

as high gain power transistors, have included on the chip,

current limiting, power limiting, and thermal overload protec-

tion making them virtually impossible to destroy from any

type of overload. In the standard TO-3 transistor power pack-

age, the LM195 will deliver load currents in excess of 1.0A

and can switch 40V in 500 ns.

For low-power applications (under 100 mA), refer to the

LP395 Ultra Reliable Power Transistor.

The LM195/LM395 are available in standard TO-3 power

packages and solid Kovar TO-5. The LM195 is rated for op-

eration from −55˚C to +150˚C and the LM395 from 0˚C to

+125˚C.

The inclusion of thermal limiting, a feature not easily avail-

able in discrete designs, provides virtually absolute protec-

tion against overload. Excessive power dissipation or inad-

equate heat sinking causes the thermal limiting circuitry to

turn off the device preventing excessive heating.

Features

n Internal thermal limiting

n Greater than 1.0A output current

n 3.0 µA typical base current

n 500 ns switching time

The LM195 offers a significant increase in reliability as well

as simplifying power circuitry. In some applications, where

protection is unusually difficult, such as switching regulators,

lamp or solenoid drivers where normal power dissipation is

low, the LM195 is especially advantageous.

n 2.0V saturation

The LM195 is easy to use and only a few precautions need

be observed. Excessive collector to emitter voltage can de-

stroy the LM195 as with any power transistor. When the de-

vice is used as an emitter follower with low source imped-

n Base can be driven up to 40V without damage

n Directly interfaces with CMOS or TTL

n 100% electrical burn-in

Simplified Circuit

DS006009-1

DS006009

www.national.com

12 3 4 5 6 7...13

中文翻译

下载PDF

与LM195K/883相关器件

型号	品牌	获取价格	描述	数据表
LM195K/883B	NSC	获取价格	IC,BLOWOUT RESISTANT TRANSISTOR,BIPOLAR/JFET,TO-204/-3,3PIN,METAL
LM195K/883C	NSC	获取价格	IC,BLOWOUT RESISTANT TRANSISTOR,BIPOLAR/JFET,TO-204/-3,3PIN,METAL
LM195K-MIL	NSC	获取价格	IC,BLOWOUT RESISTANT TRANSISTOR,BIPOLAR/JFET,TO-204/-3,3PIN,METAL
LM195KMW8	NSC	获取价格	TRANSISTOR 42 V, 3 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, WAFER, BIP General Purpose
LM195QML	TI	获取价格	LM195QML Ultra Reliable Power Transistors
LM195WD1	LG	获取价格	19.5 HD TFT LCD
LM195WD1-TLC1	LG	获取价格	19.5 HD TFT LCD
LM196	NSC	获取价格	LM196/LM396 10 Amp Adjustable Voltage Regulator
LM1964	NSC	获取价格	SENSOR INTERFACE AMPLIFIER
LM1964N	TI	获取价格	SPECIALTY ANALOG CIRCUIT, PDIP8, DIP-8

与LM195K/883相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

8
PMOS管背靠背连接：串联还是并联？
2024-06-28

7
高压电解电容的分类与选型策略
2024-06-28

8
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

14

产品中心

服务支持

精选活动

关于我们

帮助中心

LM195K/883

LM195K/883 技术参数

LM195K/883 数据手册

与LM195K/883相关器件

与LM195K/883相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

LM195K/883

LM195K/883 技术参数

LM195K/883 数据手册

与LM195K/883相关器件

与LM195K/883相关文章

您还可以找

您在本页遇到什么问题？