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LLDB3

更新时间: 2024-11-24 05:41:59
品牌 Logo 应用领域
RECTRON 触发装置二极管数据判读及分析中心
页数 文件大小 规格书
4页 175K
描述
TRIGGER DIODES

LLDB3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:LONG FORM, O-LELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.3Is Samacsys:N
最大转折电压:34 V最小转折电压:30 V
外壳连接:ISOLATED配置:SINGLE
JESD-30 代码:O-LELF-R2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:125 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):265认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:DIAC
Base Number Matches:1

LLDB3 数据手册

 浏览型号LLDB3的Datasheet PDF文件第2页浏览型号LLDB3的Datasheet PDF文件第3页浏览型号LLDB3的Datasheet PDF文件第4页 
LLDB3  
AND  
LLDB3SEL  
TRIGGER DIODES  
FEATURES  
* VBO: 32V/34V/40V VERSIONS  
* Low Breakover Current  
LL-34  
DESCRIPTION  
High reliability glass passivation insuring parameter stability  
and protection against junction contamination  
(
)
)
.059 1.50  
(
.055 1.40  
(
)
)
.020 0.50  
(
.014 0.35  
(
)
)
.138 3.51  
(
.120 3.30  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
= 25oC unless otherwise noted)  
RATING  
MAXIMUM RATINGS  
(At T  
A
SYMBOL  
VALUE  
2
UNITS  
A
I
Repetitive Peak On-State Current tp=20uA,F=100Hz  
TRM  
A
=50oC)  
150  
4.0  
mW  
Power Dissipation (@ T  
Derate Above +50oC  
P
mW/oC  
o C  
o C  
-40 to + 125  
125  
StorageTemperature Range  
Junction Temperature  
T
STG  
T
J
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
VALUE  
RATING  
SYMBOL  
UNITS  
Volts  
LLDB3  
LLDB3SEL  
Breakover Voltage(Forward and Reverse)  
at IBO,C=22nF**  
Max  
34  
Min  
30  
Min  
28  
Max  
36  
V
BO  
Volts  
Volts  
Volts  
uA  
+/-2  
5
delta  
V
BO  
Maximum Breakover Voltage Symmetry delta VBO= +VBO - -VBO C=22nF  
delta V+/-  
Minimum Dynamic Breakover Voltage delta I=IBO to I  
Minimum Output Voltage* (see Fig 2)  
F=10mA (see Fig3)  
5
V
O
Peak Breakover Current at Breakorver Voltage* C=22nF**  
Rise Time* (see Fig3)  
100  
I
25  
BO  
t
I
1.5  
10  
r
uS  
uA  
Leakage Current* VB=0.5VBO max (see Fig1)  
B
2008-02  
NOTES: 1. *Electrical characteristic applicable in both forward and reverse derections.  
2.**Connected in parallel with the devices.  
3. "Fully ROHS compliant", "100% Sn plating (Pb-free)".  

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