Datasheet > LL4448

LL4448

更新时间： 2024-11-14 03:51:31

品牌	Logo	应用领域
DAESAN		小信号开关二极管
页数	文件大小	规格书
3页	534K
描述
SMALL SIGNAL SWITCHING DIODES

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中文翻译

获取价格

数据手册

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LL4448 数据手册

SMALL SIGNAL

SWITCHING DIODES

LL4448

Features

· Silicon epitaxial planar diode

· Fast switching diodes

MELF (DO-35)

· 500mW power dissipation

SOLDERABLE ENDS

· This diode is also available in the DO-35 case with

the type designation 1N4448

0.020(0.50)

0.011(0.28)

0.063(1.60)

0.146(3.70)

0.051(1.30)

0.130(3.30)

Mechanical Data

· Case: MiniMELF glass case (DO-35)

· Weight: Approx. 0.05 gram

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified)

Symbol

Value

Units

Volts

Reverse Voltage

Peak Reverse Voltage

100

VRM

Average rectified current, Half wave rectification with

150¹⁾

Resistive load at T

A=25℃ and F≥50Hz

Surge forward current at t<1S and T

J=25℃

500

FSM

Power dissipation at T

Junction temperature

A=25℃

500¹⁾

175

Ptot

℃

Storage temperature range

-65 to +175

STG

1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)

Electrical characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified)

Symbols

Min.

Typ.

Max.

Units

Forward voltage

Leakage current

at I

=5mA

=10mA

0.72

at V

=20V

=75V

=20V, T

μA

=150℃

Junction Capacitance at V

Reverse breakdown voltage tested with 100μA Pulse

Reverse Recovery time from I =10mA to I =1mA,

=6V, R =100Ω

Thermal resistance, junction to Ambient

Rectification efficiency at f=100MHz, VRF=2V

=0V

100

(BR)R

trr

350¹⁾

K/W

RθJA

0.45

1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)

12 3

中文翻译

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