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LL4448 PDF预览

LL4448

更新时间: 2024-01-14 04:56:29
品牌 Logo 应用领域
DAESAN 小信号开关二极管
页数 文件大小 规格书
3页 534K
描述
SMALL SIGNAL SWITCHING DIODES

LL4448 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknown风险等级:5.65
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
元件数量:1最高工作温度:200 °C
最大输出电流:0.15 A最大重复峰值反向电压:100 V
最大反向恢复时间:0.008 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

LL4448 数据手册

 浏览型号LL4448的Datasheet PDF文件第2页浏览型号LL4448的Datasheet PDF文件第3页 
SMALL SIGNAL  
SWITCHING DIODES  
LL4448  
Features  
· Silicon epitaxial planar diode  
· Fast switching diodes  
MELF (DO-35)  
· 500mW power dissipation  
SOLDERABLE ENDS  
· This diode is also available in the DO-35 case with  
the type designation 1N4448  
0.020(0.50)  
0.011(0.28)  
0.063(1.60)  
0.146(3.70)  
0.051(1.30)  
0.130(3.30)  
Mechanical Data  
· Case: MiniMELF glass case (DO-35)  
· Weight: Approx. 0.05 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified)  
Symbol  
Value  
75  
Units  
Volts  
Volts  
Reverse Voltage  
VR  
Peak Reverse Voltage  
100  
VRM  
Average rectified current, Half wave rectification with  
1501)  
mA  
I
AV  
Resistive load at T  
A=25and F50Hz  
Surge forward current at t<1S and T  
J=25℃  
500  
mA  
I
FSM  
Power dissipation at T  
Junction temperature  
A=25℃  
5001)  
175  
mW  
Ptot  
T
J
Storage temperature range  
-65 to +175  
T
STG  
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)  
Electrical characteristics  
(Ratings at 25ambient temperature unless otherwise specified)  
Symbols  
Min.  
Typ.  
Max.  
Units  
Forward voltage  
Leakage current  
at I  
at I  
F
F
=5mA  
=10mA  
0.72  
1
V
V
V
F
F
V
at V  
at V  
at V  
R
R
R
=20V  
=75V  
=20V, T  
25  
5
50  
nA  
μA  
μA  
I
I
I
R
R
R
J
=150℃  
Junction Capacitance at V  
Reverse breakdown voltage tested with 100μA Pulse  
Reverse Recovery time from I =10mA to I =1mA,  
=6V, R =100Ω  
Thermal resistance, junction to Ambient  
Rectification efficiency at f=100MHz, VRF=2V  
R
=V  
F
=0V  
4
pF  
V
C
J
100  
V
(BR)R  
F
R
4
ns  
trr  
VR  
L
3501)  
K/W  
RθJA  
η
0.45  
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)  

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