Datasheet > LL103C-13

LL103C-13

更新时间： 2024-11-22 03:24:43

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	56K
描述
Rectifier Diode, Schottky, 1 Element, 20V V(RRM), Silicon, GLASS, MINIMELF-2

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数据手册

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LL103C-13 数据手册

LL / LLSD103A - 103C

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Forward Voltage Drop

Guard Ring Construction for Transient

Protection

Low Reverse Recovery Time

Low Reverse Capacitance

Mechanical Data

MiniMELF

Case: MiniMELF, Glass

Terminals: Solderable per MIL-STD-202,

Dim

Min

3.30

1.30

0.28

Max

3.70

1.60

0.50

Method 208

Marking: Cathode Band Only

Polarity: Cathode Band

Weight: 0.05 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

LL / LLSD103A

LL / LLSD103B

LL / LLSD103C

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

V_R(RMS)

I_FM

RMS Reverse Voltage

350

1.0

Forward Continuous Current (Note 1)

Repetitive Peak Forward Current

I_FRM

@ t £ 1.0s

Non-Repetitive Peak Forward Surge Current @ t £ 1.0s

1.5

7.5

I_FSM

@ t = 10ms

P_d

Power Dissipation (Note 1)

400

250

K/W

°C

R_qJA

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

T_j, T_STG

-65 to +175

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

I_F= 20mA

I_F= 200mA

0.37

0.60

V_FM

Maximum Forward Voltage Drop

V_R= 30V

Maximum Peak Reverse Current

LL / LLSD103A

LL / LLSD103B

LL / LLSD103C

I_RM

_R= 20V

_R= 10V

5.0

V_R= 0V, f = 1.0MHz

C_j

t_rr

Junction Capacitance

I_F= I_R= 50mA to 200mA,

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

Note:

1. Valid provided that electrodes are kept at ambient temperature.

DS30068 Rev. A-2

1 of 2

LL / LLSD103A - 103C

中文翻译

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