Datasheet > LL106

LL106

更新时间： 2024-09-24 05:41:59

品牌	Logo	应用领域
商升特 - SEMTECH		肖特基二极管
页数	文件大小	规格书
1页	98K
描述
SILICON SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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LL106 数据手册

LL106

SILICON SCHOTTKY BARRIER DIODE

FOR VARIOUS DETECTOR

High Speed Switching

LL-34

Features

•

Detection efficiency is very good

Small temperature coefficient

High reliability with glass seal

Absolute Maximum Ratings (T_a= 25^oC)

Symbol

Value

Unit

Reverse Voltage

V_R

I_o

Average Rectified Current

Junction Temperature

Storage Temperature

^OC

T_j

125

T_Stg

-55 to +125

Characteristics at T_amb= 25^oC

Symbol

Min.

4.5

Typ.

Max.

Unit

μA

Forward Current

at V_F= 1V

I_F

I_R

Reverse current

at V_R= 6V

1.5

Capacitance

at V_R= 1V, f = 1MHz

Rectifier efficiency

at Vin = 2Vrms, f = 40MHz,

R_L= 5KΩ, C_L= 20pF

ESD-Capability^*1

at C = 200pF,Both forward and

reverse direction 1 pulse

100

Note: 1. Failure criterion; I_R/140μA at V_R= 6V

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 13/03/2003

中文翻译

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