Datasheet > LGB8207TH

LGB8207TH

更新时间： 2023-12-06 20:13:07

品牌	Logo	应用领域
力特 - LITTELFUSE		栅驱动双极性晶体管高压装置驱动器
页数	文件大小	规格书
10页	494K
描述
这款逻辑电平绝缘栅双极晶体管（IGBT）配有集成ESD与过压箝位保护装置的单片电路，可用于感应线圈驱动器应用。主要用途包括点火、直接燃油喷射或需要高压与高电流切换的应用。功能与特色: 应用: 终端产品:

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LGB8207TH 数据手册

Datasheet

1. Maxim um Ratings (T_J= 25 °C unless otherwise specified)

Characteristic

Conditions

Sym bol

Value

365

Unit

Collector-Emitter Voltage

CES

Gate-Emitter Voltage

V_GE

I_C

±15

Collector Current Continuous

Collector Current Pulsed

Continuous Gate Current

Transient Gate Current

A_DC

A_AC

T_C= 25 °C

1.0

I_G

ESD Charged-Device Model

ESD Human Body Model

ESD Machine Model

2.0

ESD

8.0

500

T_C= 25 °C

165

Total Power Dissipation

P_D

Derating for >25 °C

1.1

W/°C

°C

Operating and Storage Temperature Range

T_J, T_stg

-55 to +175

2. Unclam ped Collector-to-Em itter Avalanche Characteristics

Characteristic

Sym bol

Value

Unit

Single Pulse Collector-to-Emitter Avalanche Energy

_CC= 50 V, V_GE= 5.0 V, P_kI_L= 16.5 A, L = 3.7 mH, R_G

_CC= 50 V, V_GE= 5.0 V, P_kI_L= 10 A, L = 6.1 mH, R_G

Reverse Avalanche Energy

_CC= 100 V, V_GE= 20 V, P_kI_L= 25.8 A, L = 6.0 mH, Starting T_J= 25 °C

Starting T_J= 25 °C

500

306

E_AS

Starting T_J= 125 °C

E_AS(R)

2000

Note: -

3. Therm al Characteristics

Characteristic

Sym bol

Value

0.9

Unit

°C/W

°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient (D2PAK)¹

Maximum

R_θ

5 seconds

T_L

275

Footnote 1: When surface mounted to an FR4 board using the minimum recommended pad size

Specifications are subject to change without notice.

Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Revised: 3/24/2020

1 234 5 6 7...10

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