Datasheet > LG226C104MAT2S1

LG226C104MAT2S1

更新时间： 2024-11-29 21:04:35

品牌	Logo	应用领域
京瓷/艾维克斯 - KYOCERA AVX		/
页数	文件大小	规格书
4页	293K
描述
CAP CER .10UF 6.3V 0306 LOW IND

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

LG226C104MAT2S1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	CHIP
Reach Compliance Code：	compliant	Factory Lead Time：	14 weeks
风险等级：	5.75	Base Number Matches：	1

LG226C104MAT2S1 数据手册

Low Inductance Capacitors

Introduction

The signal integrity characteristics of a Power Delivery

Network (PDN) are becoming critical aspects of board level

and semiconductor package designs due to higher operating

frequencies, larger power demands, and the ever shrinking

lower and upper voltage limits around low operating voltages.

These power system challenges are coming from mainstream

designs with operating frequencies of 300MHz or greater,

modest ICs with power demand of 15 watts or more, and

operating voltages below 3 volts.

capacitor, one resistor, and one inductor. The RLC values in

this model are commonly referred to as equivalent series

capacitance (ESC), equivalent series resistance (ESR), and

equivalent series inductance (ESL).

The ESL of a capacitor determines the speed of energy

transfer to a load. The lower the ESL of a capacitor, the faster

that energy can be transferred to a load. Historically, there

has been a tradeoff between energy storage (capacitance)

and inductance (speed of energy delivery). Low ESL devices

typically have low capacitance. Likewise, higher capacitance

devices typically have higher ESLs. This tradeoff between

ESL (speed of energy delivery) and capacitance (energy

storage) drives the PDN design topology that places the

fastest low ESL capacitors as close to the load as possible.

Low Inductance MLCCs are found on semiconductor

packages and on boards as close as possible to the load.

The classic PDN topology is comprised of a series of

capacitor stages. Figure 1 is an example of this architecture

with multiple capacitor stages.

An ideal capacitor can transfer all its stored energy to a load

instantly. A real capacitor has parasitics that prevent

instantaneous transfer of a capacitor’s stored energy. The

true nature of a capacitor can be modeled as an RLC

equivalent circuit. For most simulation purposes, it is possible

to model the characteristics of a real capacitor with one

Slowest Capacitors

Fastest Capacitors

Semiconductor Product

Bulk

Board-Level

Package-Level

Die-Level

Low Inductance Decoupling Capacitors

Figure 1 Classic Power Delivery Network (PDN) Architecture

LOW INDUCTANCE CHIP CAPACITORS

INTERDIGITATED CAPACITORS

The key physical characteristic determining equivalent series

inductance (ESL) of a capacitor is the size of the current loop

it creates. The smaller the current loop, the lower the ESL. A

standard surface mount MLCC is rectangular in shape with

electrical terminations on its shorter sides. A Low Inductance

Chip Capacitor (LICC) sometimes referred to as Reverse

Geometry Capacitor (RGC) has its terminations on the longer

side of its rectangular shape.

The size of a current loop has the greatest impact on the ESL

characteristics of a surface mount capacitor. There is a

secondary method for decreasing the ESL of a capacitor.

This secondary method uses adjacent opposing current

loops to reduce ESL. The InterDigitated Capacitor (IDC)

utilizes both primary and secondary methods of reducing

inductance. The IDC architecture shrinks the distance

between terminations to minimize the current loop size, then

further reduces inductance by creating adjacent opposing

current loops.

When the distance between terminations is reduced, the size

of the current loop is reduced. Since the size of the current

loop is the primary driver of inductance, an 0306 with a

smaller current loop has significantly lower ESL then an 0603.

The reduction in ESL varies by EIA size, however, ESL is

typically reduced 60% or more with an LICC versus a

standard MLCC.

An IDC is one single capacitor with an internal structure that

has been optimized for low ESL. Similar to standard MLCC

versus LICCs, the reduction in ESL varies by EIA case size.

Typically, for the same EIA size, an IDC delivers an ESL that

is at least 80% lower than an MLCC.

REV 01

12 3 4

中文翻译

下载PDF

LG226C104MAT2S1 替代型号

型号	品牌	替代类型	描述	数据表
03066C104KAT2A	KYOCERA AVX	类似代替	Low Inductance Capacitors
0306ZC104KAT2A	KYOCERA AVX	功能相似	Ceramic Capacitor, Multilayer, Ceramic, 10V, 10% +Tol, 10% -Tol, X7R, 15% TC, 0.1uF, Surfa
0306ZC104KAT4A	KYOCERA AVX	功能相似	Low Inductance Capacitors

与LG226C104MAT2S1相关器件

型号	品牌	获取价格	描述	数据表
LG226C153MAT2S1	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 6.3V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.015uF, Surface Mount,
LG226C153MAT2X1	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 6.3V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.015uF, Surface Mount,
LG226C153MAT4S1	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 6.3V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.015uF, Surface Mount,
LG226C153MAT4X1	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 6.3V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.015uF, Surface Mount,
LG226C223MAT2S1	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 6.3V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.022uF, Surface Mount,
LG226C223MAT2X1	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 6.3V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.022uF, Surface Mount,
LG226C223MAT4S1	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 6.3V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.022uF, Surface Mount,
LG226C223MAT4X1	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 6.3V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.022uF, Surface Mount,
LG226C333MAT2S1	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 6.3V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.033uF, Surface Mount,
LG226C333MAT2X1	KYOCERA AVX	获取价格	Ceramic Capacitor, Ceramic, 6.3V, 20% +Tol, 20% -Tol, X7R, 15% TC, 0.033uF, Surface Mount,

与LG226C104MAT2S1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

LG226C104MAT2S1

LG226C104MAT2S1 技术参数

LG226C104MAT2S1 数据手册

LG226C104MAT2S1 替代型号

与LG226C104MAT2S1相关器件

与LG226C104MAT2S1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

LG226C104MAT2S1

LG226C104MAT2S1 技术参数

LG226C104MAT2S1 数据手册

LG226C104MAT2S1 替代型号

与LG226C104MAT2S1相关器件

与LG226C104MAT2S1相关文章

您还可以找

您在本页遇到什么问题？