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LF353 PDF预览

LF353

更新时间: 2024-09-26 22:47:11
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器
页数 文件大小 规格书
14页 595K
描述
Wide Bandwidth Dual JFET Input Operational Amplifier

LF353 数据手册

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December 2003  
LF353  
Wide Bandwidth Dual JFET Input Operational Amplifier  
General Description  
Features  
n Internally trimmed offset voltage:  
n Low input bias current:  
n Low input noise voltage:  
n Low input noise current:  
n Wide gain bandwidth:  
n High slew rate:  
10 mV  
50pA  
These devices are low cost, high speed, dual JFET input  
operational amplifiers with an internally trimmed input offset  
voltage (BI-FET II technology). They require low supply  
25 nV/ Hz  
current yet maintain a large gain bandwidth product and fast  
slew rate. In addition, well matched high voltage JFET input  
devices provide very low input bias and offset currents. The  
LF353 is pin compatible with the standard LM1558 allowing  
designers to immediately upgrade the overall performance of  
existing LM1558 and LM358 designs.  
0.01 pA/ Hz  
4 MHz  
13 V/µs  
3.6 mA  
1012  
0.02%  
50 Hz  
2 µs  
n Low supply current:  
n High input impedance:  
n Low total harmonic distortion :  
n Low 1/f noise corner:  
n Fast settling time to 0.01%:  
These amplifiers may be used in applications such as high  
speed integrators, fast D/A converters, sample and hold  
circuits and many other circuits requiring low input offset  
voltage, low input bias current, high input impedance, high  
slew rate and wide bandwidth. The devices also exhibit low  
noise and offset voltage drift.  
Typical Connection  
Connection Diagram  
Dual-In-Line Package  
00564917  
00564914  
Top View  
Order Number LF353M, LF353MX or LF353N  
See NS Package Number M08A or N08E  
Simplified Schematic  
1/2 Dual  
00564916  
BI-FET II is a trademark of National Semiconductor Corporation.  
© 2003 National Semiconductor Corporation  
DS005649  
www.national.com  

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